Zn drops at a Si surface measured by the refracted x-ray fluorescence method

Y. C. Sasaki, M. Kisimoto, S. Nagata, S. Yamaguchi, K. Hirokawa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Si and Zn are essentially mutually insoluble. We were able to detect Zn drops at a Si surface by using the refracted x-ray fluorescence method when the Si wafer was implanted with Zn ions at 50 keV up to doses of 1 × 10 16 cm-2. The presence of the Zn drops at the Si surface was confirmed both by measuring surface roughness and Rutherford-backscattering spectroscopy spectra.

Original languageEnglish
Pages (from-to)8420-8422
Number of pages3
JournalJournal of Applied Physics
Volume69
Issue number12
DOIs
Publication statusPublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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