Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism

J. H. Zhao, F. Matsukura, K. Takamura, D. Chiba, Y. Ohno, K. Ohtani, H. Ohno

Research output: Contribution to journalArticle

24 Citations (Scopus)


CrSb (1ML)/GaAs (5nm) multilayers with period up to 4 have been grown on GaAs substrates by solid-source molecular-beam epitaxy at 250°C. Reflection high-energy electron diffraction reveals zincblende characteristics throughout the growth of multilayer structures. High-resolution cross-sectional transmission electron microscopy also indicates that the crystal structure of the multilayers is zincblende and with no dislocations at the interfaces. The presence of room-temperature ferromagnetism is confirmed by magnetization measurements.

Original languageEnglish
Pages (from-to)507-509
Number of pages3
JournalMaterials Science in Semiconductor Processing
Issue number5-6
Publication statusPublished - 2003 Oct 1


  • Ferromagnetism in zincblende CrSb/GaAs multilayers
  • Molecular-beam epitaxy
  • Zincblende CrSb

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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