Zinc-blende-type cubic GaN single crystals prepared in a potassium flux

Hisanori Yamane, Takashi Kajiwara, Takashi Sekiguchi, Masahiko Shimada

    Research output: Contribution to journalArticlepeer-review

    24 Citations (Scopus)

    Abstract

    Single crystals of zinc-blende-type cubic GaN (c-GaN, space group F 43m, lattice parameter a = 4.5062(9) angstrom) were synthesized at 750°C by the reaction of Ga and N2 in a potassium flux. The crystal structure was analyzed by single-crystal X-ray diffraction with an R1-factor of 2.1% (R1 = Σ ∥ Fo -Fc ∥/Σ|Fo|), where Fo is the observed structure factor and Fc is the calculated structure factor). A peak of near-band-edge emission was observed at 3.20eV in the cathodoluminescence spectrum measured at 25°C.

    Original languageEnglish
    JournalUnknown Journal
    Volume39
    Issue number2 B
    DOIs
    Publication statusPublished - 2000 Jan 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    Fingerprint

    Dive into the research topics of 'Zinc-blende-type cubic GaN single crystals prepared in a potassium flux'. Together they form a unique fingerprint.

    Cite this