TY - JOUR
T1 - Zinc-blende-type cubic GaN single crystals prepared in a potassium flux
AU - Yamane, Hisanori
AU - Kajiwara, Takashi
AU - Sekiguchi, Takashi
AU - Shimada, Masahiko
PY - 2000
Y1 - 2000
N2 - Single crystals of zinc-blende-type cubic GaN (c-GaN, space group F 43m, lattice parameter a = 4.5062(9) angstrom) were synthesized at 750°C by the reaction of Ga and N2 in a potassium flux. The crystal structure was analyzed by single-crystal X-ray diffraction with an R1-factor of 2.1% (R1 = Σ ∥ Fo -Fc ∥/Σ|Fo|), where Fo is the observed structure factor and Fc is the calculated structure factor). A peak of near-band-edge emission was observed at 3.20eV in the cathodoluminescence spectrum measured at 25°C.
AB - Single crystals of zinc-blende-type cubic GaN (c-GaN, space group F 43m, lattice parameter a = 4.5062(9) angstrom) were synthesized at 750°C by the reaction of Ga and N2 in a potassium flux. The crystal structure was analyzed by single-crystal X-ray diffraction with an R1-factor of 2.1% (R1 = Σ ∥ Fo -Fc ∥/Σ|Fo|), where Fo is the observed structure factor and Fc is the calculated structure factor). A peak of near-band-edge emission was observed at 3.20eV in the cathodoluminescence spectrum measured at 25°C.
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U2 - 10.1143/JJAP.39.L146
DO - 10.1143/JJAP.39.L146
M3 - Article
AN - SCOPUS:0033893026
VL - 39
SP - L146-L148
JO - [No source information available]
JF - [No source information available]
IS - 2 B
ER -