Zinc-blende-type cubic GaN single crystals prepared in a potassium flux

Hisanori Yamane, Takashi Kajiwara, Takashi Sekiguchi, Masahiko Shimada

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24 Citations (Scopus)


Single crystals of zinc-blende-type cubic GaN (c-GaN, space group F 43m, lattice parameter a = 4.5062(9) angstrom) were synthesized at 750°C by the reaction of Ga and N2 in a potassium flux. The crystal structure was analyzed by single-crystal X-ray diffraction with an R1-factor of 2.1% (R1 = Σ ∥ Fo -Fc ∥/Σ|Fo|), where Fo is the observed structure factor and Fc is the calculated structure factor). A peak of near-band-edge emission was observed at 3.20eV in the cathodoluminescence spectrum measured at 25°C.

Original languageEnglish
Pages (from-to)L146-L148
JournalUnknown Journal
Issue number2 B
Publication statusPublished - 2000

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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