Single crystals of zinc-blende-type cubic GaN (c-GaN, space group F 43m, lattice parameter a = 4.5062(9) angstrom) were synthesized at 750°C by the reaction of Ga and N2 in a potassium flux. The crystal structure was analyzed by single-crystal X-ray diffraction with an R1-factor of 2.1% (R1 = Σ ∥ Fo -Fc ∥/Σ|Fo|), where Fo is the observed structure factor and Fc is the calculated structure factor). A peak of near-band-edge emission was observed at 3.20eV in the cathodoluminescence spectrum measured at 25°C.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)