Zinc-blende CrAs/GaAs multilayers grown by molecular-beam epitaxy

H. Akinaga, Masaki Mizuguchi

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


The epitaxial growth of zinc-blende CrAs/GaAs multilayers has been achieved by using the molecular-beam epitaxy method. The crystallographic quality was evaluated by reflection high-energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM). The increase of the substrate temperature during growth up to 300°C brings the RHEED pattern to a streak, in contrast to the case at 200°C. TEM images show the atomically flat surface and interface of the multilayer.

Original languageEnglish
JournalJournal of Physics Condensed Matter
Issue number48
Publication statusPublished - 2004 Dec 8
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials


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