The epitaxial growth of zinc-blende CrAs/GaAs multilayers has been achieved by using the molecular-beam epitaxy method. The crystallographic quality was evaluated by reflection high-energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM). The increase of the substrate temperature during growth up to 300°C brings the RHEED pattern to a streak, in contrast to the case at 200°C. TEM images show the atomically flat surface and interface of the multilayer.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials