Zero temperature coefficient and stability of electrical resistibility of Ni-Si-B amorphous alloys

Teruo Bitoh, Akihiro Makino, Matsuo Zama, Hiroki Kudoh

Research output: Contribution to journalArticlepeer-review

Abstract

The compositional dependence of the temperature coefficient of the electrical resistivity (TCR) of the Ni100-x-ySixB s (x = 8, y = 22-26 and x = 10, y = 22-24) amorphous alloys was investigated with an intention of the application of the alloys to ultra-precise resistive elements. With increasing Si + B content, sign of TCR changes from the positive to the negative. The very small absolute values of TCR less than 5×l0-6 K-1 in a temperature range of 260-333 K is obtained for the alloys with+y = 32.3-32.5. Especially, the Ni 67.7SiioB22.3 alloy exhibits an extremely small TCR of -0.8×1-6 K-1. Furthermore, it was confirmed that the alloys exhibit a small thermoelectromotive force relative to Cu. Patterned resistive elements by using the Ni-Si-B amorphous alloys were produced experimentally. As a result in the aging at 298 K, the electrical resistance (R) of the patterned Ni68Si10B22 element increases about 5×10-3 % for 7056 hours. However, the change of R shows a tendency to gradually saturate. It can be concluded that the Ni 100-x-ySixBy, amorphous alloys with x + v ≈ 32 are promising as a material for the ultra-precise resistive elements.

Original languageEnglish
Pages (from-to)229-232
Number of pages4
JournalJournal of Metastable and Nanocrystalline Materials
Volume24-25
DOIs
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science (miscellaneous)
  • Materials Science(all)
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

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