Abstract
A gated inverted In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well is studied via magnetotransport. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov–de Haas oscillation, we determine the gate voltage (or electron concentration) dependence of the spin-orbit coupling parameter α. Our experimental data and its analysis show that the band nonparabolicity effect cannot be neglected. For electron concentrations above 2×1012cm−2, it causes a reduction of a up to 25%. We report the a value for the second subband.
| Original language | English |
|---|---|
| Pages (from-to) | 7736-7739 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 60 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1999 Jan 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Hu, C. M., Nitta, J., Akazaki, T., Takayanagi, H., Osaka, J., Pfeffer, P., & Zawadzki, W. (1999). Zero-field spin splitting in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure: Band nonparabolicity influence and the subband dependence. Physical Review B - Condensed Matter and Materials Physics, 60(11), 7736-7739. https://doi.org/10.1103/PhysRevB.60.7736