TY - JOUR
T1 - Zero-field spin splitting in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure
T2 - Band nonparabolicity influence and the subband dependence
AU - Hu, Can Ming
AU - Nitta, Junsaku
AU - Akazaki, Tatsushi
AU - Takayanagi, Hideaki
AU - Osaka, Jiro
AU - Pfeffer, P.
AU - Zawadzki, W.
PY - 1999
Y1 - 1999
N2 - A gated inverted In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well is studied via magnetotransport. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov–de Haas oscillation, we determine the gate voltage (or electron concentration) dependence of the spin-orbit coupling parameter α. Our experimental data and its analysis show that the band nonparabolicity effect cannot be neglected. For electron concentrations above 2×1012cm−2, it causes a reduction of a up to 25%. We report the a value for the second subband.
AB - A gated inverted In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well is studied via magnetotransport. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov–de Haas oscillation, we determine the gate voltage (or electron concentration) dependence of the spin-orbit coupling parameter α. Our experimental data and its analysis show that the band nonparabolicity effect cannot be neglected. For electron concentrations above 2×1012cm−2, it causes a reduction of a up to 25%. We report the a value for the second subband.
UR - http://www.scopus.com/inward/record.url?scp=4244082534&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4244082534&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.60.7736
DO - 10.1103/PhysRevB.60.7736
M3 - Article
AN - SCOPUS:4244082534
VL - 60
SP - 7736
EP - 7739
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 11
ER -