A gated inverted In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well is studied via magnetotransport. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov–de Haas oscillation, we determine the gate voltage (or electron concentration) dependence of the spin-orbit coupling parameter α. Our experimental data and its analysis show that the band nonparabolicity effect cannot be neglected. For electron concentrations above 2×1012cm−2, it causes a reduction of a up to 25%. We report the a value for the second subband.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 1999 Jan 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics