Zero-field spin splitting in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure: Band nonparabolicity influence and the subband dependence

Can Ming Hu, Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi, Jiro Osaka, P. Pfeffer, W. Zawadzki

Research output: Contribution to journalArticlepeer-review

208 Citations (Scopus)


A gated inverted In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well is studied via magnetotransport. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov–de Haas oscillation, we determine the gate voltage (or electron concentration) dependence of the spin-orbit coupling parameter α. Our experimental data and its analysis show that the band nonparabolicity effect cannot be neglected. For electron concentrations above 2×1012cm−2, it causes a reduction of a up to 25%. We report the a value for the second subband.

Original languageEnglish
Pages (from-to)7736-7739
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number11
Publication statusPublished - 1999 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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