Zero-field spin splitting in an inverted In0.53Ga0.47As/In0.52Al0.48As heterostructure: Band nonparabolicity influence and the subband dependence

Can Ming Hu; Junsaku Nitta; Tatsushi Akazaki; Hideaki Takayanagi; Jiro Osaka; P. Pfeffer; W. Zawadzki

doi:10.1103/PhysRevB.60.7736

Zero-field spin splitting in an inverted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure: Band nonparabolicity influence and the subband dependence

Can Ming Hu, Junsaku Nitta, Tatsushi Akazaki, Hideaki Takayanagi, Jiro Osaka, P. Pfeffer, W. Zawadzki

Research output: Contribution to journal › Article › peer-review

208 Citations (Scopus)

Abstract

A gated inverted In_0.52A_l0.48As/In_0.53Ga_0.47As/In_0.52A_l0.48As quantum well is studied via magnetotransport. By analyzing the gate-voltage-dependent beating pattern observed in the Shubnikov–de Haas oscillation, we determine the gate voltage (or electron concentration) dependence of the spin-orbit coupling parameter α. Our experimental data and its analysis show that the band nonparabolicity effect cannot be neglected. For electron concentrations above 2×10¹²cm⁻², it causes a reduction of a up to 25%. We report the a value for the second subband.

Original language	English
Pages (from-to)	7736-7739
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	60
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.60.7736
Publication status	Published - 1999 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Zero-field spin splitting in an inverted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure : Band nonparabolicity influence and the subband dependence. / Hu, Can Ming; Nitta, Junsaku; Akazaki, Tatsushi; Takayanagi, Hideaki; Osaka, Jiro; Pfeffer, P.; Zawadzki, W.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 60, No. 11, 01.01.1999, p. 7736-7739.

Research output: Contribution to journal › Article › peer-review

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