Yttria stabilized zirconia transparent films prepared by chemical vapor deposition

Hisanori Yamane, Toshio Hirai

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Yttria stabilized zirconia (YSZ) transparent films were prepared on quartz glass substrates at the temperature of 1375 K under atmospheric pressure using ZrCl4, YCl3 and O2 gases as source materials. The growth rate of the film thickness was 1.5 to 2.0 μm/h. Cubic YSZ films were obtained at the value of x between 20 to 60, where x is defined by x(wt%) = YCl3×100/(YCl3+ZrCl4). The lattice parameter of the cubic YSZ increased from 5.14 to 5.19 Å with the increase of x. Transparent films were obtained at the interval where the x value was between 20 to 45. The (100) plane of YSZ is oriented parallel to the surface of the substrate. For transparent film obtained at x = 29 (1.5 μm in thickness) the optical transmittance was 50-70% in the wavelength range of 250-800 nm.

Original languageEnglish
Pages (from-to)880-884
Number of pages5
JournalJournal of Crystal Growth
Volume94
Issue number4
DOIs
Publication statusPublished - 1989 Apr

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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