Yield strength and dislocation mobility in plastically deformed ZnSe

I. Yonenaga; K. Watanabe; S. Itoh; S. Fujiwara; K. Yoshino

doi:10.1016/j.physb.2005.12.193

Yield strength and dislocation mobility in plastically deformed ZnSe

I. Yonenaga, K. Watanabe, S. Itoh, S. Fujiwara, K. Yoshino

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

The strength of single- and polycrystalline ZnSe was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnSe was rather low around 13 MPa, easily deformed even at low temperatures 150 °C. The activation energy for dislocation motion in ZnSe was estimated to be 0.5-0.7 eV. The intrinsic stacking fault energy was measured 7-9 mJ/m ² from the dissociation width ∼20 nm of dislocations into partials by weak-beam transmission electron microscopy. The recombination-enhanced dislocation motion was detected through the change of dislocation morphologies induced by the electron irradiation during weak-beam observation.

Original language	English
Pages (from-to)	771-774
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.193
Publication status	Published - 2006 Apr 1
Externally published	Yes
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29

Keywords

Dislocation mobility
Dissociation
Electronic excitation
Zinc selenide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2005.12.193

Cite this

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title = "Yield strength and dislocation mobility in plastically deformed ZnSe",

abstract = "The strength of single- and polycrystalline ZnSe was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnSe was rather low around 13 MPa, easily deformed even at low temperatures 150 °C. The activation energy for dislocation motion in ZnSe was estimated to be 0.5-0.7 eV. The intrinsic stacking fault energy was measured 7-9 mJ/m 2 from the dissociation width ∼20 nm of dislocations into partials by weak-beam transmission electron microscopy. The recombination-enhanced dislocation motion was detected through the change of dislocation morphologies induced by the electron irradiation during weak-beam observation.",

keywords = "Dislocation mobility, Dissociation, Electronic excitation, Zinc selenide",

author = "I. Yonenaga and K. Watanabe and S. Itoh and S. Fujiwara and K. Yoshino",

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T1 - Yield strength and dislocation mobility in plastically deformed ZnSe

AU - Yonenaga, I.

AU - Watanabe, K.

AU - Itoh, S.

AU - Fujiwara, S.

AU - Yoshino, K.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - The strength of single- and polycrystalline ZnSe was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnSe was rather low around 13 MPa, easily deformed even at low temperatures 150 °C. The activation energy for dislocation motion in ZnSe was estimated to be 0.5-0.7 eV. The intrinsic stacking fault energy was measured 7-9 mJ/m 2 from the dissociation width ∼20 nm of dislocations into partials by weak-beam transmission electron microscopy. The recombination-enhanced dislocation motion was detected through the change of dislocation morphologies induced by the electron irradiation during weak-beam observation.

AB - The strength of single- and polycrystalline ZnSe was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnSe was rather low around 13 MPa, easily deformed even at low temperatures 150 °C. The activation energy for dislocation motion in ZnSe was estimated to be 0.5-0.7 eV. The intrinsic stacking fault energy was measured 7-9 mJ/m 2 from the dissociation width ∼20 nm of dislocations into partials by weak-beam transmission electron microscopy. The recombination-enhanced dislocation motion was detected through the change of dislocation morphologies induced by the electron irradiation during weak-beam observation.

KW - Dislocation mobility

KW - Dissociation

KW - Electronic excitation

KW - Zinc selenide

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DO - 10.1016/j.physb.2005.12.193

M3 - Conference article

AN - SCOPUS:33645133408

SN - 0921-4526

VL - 376-377

SP - 771

EP - 774

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Yield strength and dislocation mobility in plastically deformed ZnSe

Abstract

Keywords

ASJC Scopus subject areas

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