Yield strength and dislocation mobility in plastically deformed ZnSe

I. Yonenaga, K. Watanabe, S. Itoh, S. Fujiwara, K. Yoshino

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

The strength of single- and polycrystalline ZnSe was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnSe was rather low around 13 MPa, easily deformed even at low temperatures 150 °C. The activation energy for dislocation motion in ZnSe was estimated to be 0.5-0.7 eV. The intrinsic stacking fault energy was measured 7-9 mJ/m 2 from the dissociation width ∼20 nm of dislocations into partials by weak-beam transmission electron microscopy. The recombination-enhanced dislocation motion was detected through the change of dislocation morphologies induced by the electron irradiation during weak-beam observation.

Original languageEnglish
Pages (from-to)771-774
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Keywords

  • Dislocation mobility
  • Dissociation
  • Electronic excitation
  • Zinc selenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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