XPS study of the reaction of the Si(100) surface with a C 2 H 4 beam

T. Takagaki, Y. Igari, T. Takaoka, I. Kusunoki

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The carbide layers produced by reaction of a Si(100) surface with a C 2 H 4 beam were analyzed by high resolution X-ray photoelectron spectroscopy (XPS). It was found that the reaction occurs above ∼ 600°C. The growth rate of the carbide layer at a beam flux of 2.7 × 10 15 molecules cm -2 s -1 increased with the surface temperature up to 675°C, and then decreased with increasing the temperature. This phenomenon is explained in terms of the surface residence time of the incident molecules and the diffusion rate of the Si atoms from the substrate to the surface.

Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalApplied Surface Science
Volume92
DOIs
Publication statusPublished - 1996 Feb

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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