XPS study of nitridation of diamond and graphite with a nitrogen ion beam

I. Kusunoki; M. Sakai; Y. Igari; S. Ishidzuka; T. Takami; T. Takaoka; M. Nishitani-Gamo; T. Ando

doi:10.1016/S0039-6028(01)01430-3

XPS study of nitridation of diamond and graphite with a nitrogen ion beam

I. Kusunoki, M. Sakai, Y. Igari, S. Ishidzuka, T. Takami, T. Takaoka, M. Nishitani-Gamo, T. Ando

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Abstract

Diamond (CVD) and graphite (HOPG) samples were nitrided at room temperature by irradiation with 300-700 eV N₂⁺ ion beams. X-ray photoelectron spectra (XPS) were recorded in situ during the nitridation. The XPS spectra of C1s and N1s core levels are divided into three (A, B, C) and four (D, E, F, G) components, respectively. The A component at ∼284.8 eV is assigned to the non-damaged substrate below the ion penetration depth. The B component at ∼286.0 eV originates in the damaged phase and the sub-nitride phase (CN_x: x<1). The C component at ∼287.3 eV is attributed to genuine nitrides such as C₃N₄. The broad N1s XPS peak at ∼400 eV splits clearly into the D (∼398.4 eV) and F (∼401.2 eV) components upon annealing at 600°C in vacuum. The splitting is caused by evaporation of the volatile E component (∼399.7 eV). The intensity of the D component was always comparable to that of the F component in both diamond and graphite cases. The origins of these components are discussed. The G component may be due to nitrogen trapped at defects.

Original language	English
Pages (from-to)	315-328
Number of pages	14
Journal	Surface Science
Volume	492
Issue number	3
DOIs	https://doi.org/10.1016/S0039-6028(01)01430-3
Publication status	Published - 2001 Oct 20

Keywords

Atom-solid reactions
Diamond
Graphite
Ion implantation
Nitrides
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(01)01430-3

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title = "XPS study of nitridation of diamond and graphite with a nitrogen ion beam",

abstract = "Diamond (CVD) and graphite (HOPG) samples were nitrided at room temperature by irradiation with 300-700 eV N2+ ion beams. X-ray photoelectron spectra (XPS) were recorded in situ during the nitridation. The XPS spectra of C1s and N1s core levels are divided into three (A, B, C) and four (D, E, F, G) components, respectively. The A component at ∼284.8 eV is assigned to the non-damaged substrate below the ion penetration depth. The B component at ∼286.0 eV originates in the damaged phase and the sub-nitride phase (CNx: x<1). The C component at ∼287.3 eV is attributed to genuine nitrides such as C3N4. The broad N1s XPS peak at ∼400 eV splits clearly into the D (∼398.4 eV) and F (∼401.2 eV) components upon annealing at 600°C in vacuum. The splitting is caused by evaporation of the volatile E component (∼399.7 eV). The intensity of the D component was always comparable to that of the F component in both diamond and graphite cases. The origins of these components are discussed. The G component may be due to nitrogen trapped at defects.",

keywords = "Atom-solid reactions, Diamond, Graphite, Ion implantation, Nitrides, X-ray photoelectron spectroscopy",

author = "I. Kusunoki and M. Sakai and Y. Igari and S. Ishidzuka and T. Takami and T. Takaoka and M. Nishitani-Gamo and T. Ando",

note = "Funding Information: We would like to thank Prof. R. B. Doak for careful reading of the manuscript. This was carried out as a project research “atomic and molecular level control of diamond crystal growth” financially supported by CREST (Core Research for Evolutional Science and Technology) of Japan Science and Technology Corporation (JST). This work was also financially supported by a Grant-in-Aid from the Ministry of Education, Culture, Sports, Science and Technology.",

year = "2001",

month = oct,

day = "20",

doi = "10.1016/S0039-6028(01)01430-3",

language = "English",

volume = "492",

pages = "315--328",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

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TY - JOUR

T1 - XPS study of nitridation of diamond and graphite with a nitrogen ion beam

AU - Kusunoki, I.

AU - Sakai, M.

AU - Igari, Y.

AU - Ishidzuka, S.

AU - Takami, T.

AU - Takaoka, T.

AU - Nishitani-Gamo, M.

AU - Ando, T.

N1 - Funding Information: We would like to thank Prof. R. B. Doak for careful reading of the manuscript. This was carried out as a project research “atomic and molecular level control of diamond crystal growth” financially supported by CREST (Core Research for Evolutional Science and Technology) of Japan Science and Technology Corporation (JST). This work was also financially supported by a Grant-in-Aid from the Ministry of Education, Culture, Sports, Science and Technology.

PY - 2001/10/20

Y1 - 2001/10/20

N2 - Diamond (CVD) and graphite (HOPG) samples were nitrided at room temperature by irradiation with 300-700 eV N2+ ion beams. X-ray photoelectron spectra (XPS) were recorded in situ during the nitridation. The XPS spectra of C1s and N1s core levels are divided into three (A, B, C) and four (D, E, F, G) components, respectively. The A component at ∼284.8 eV is assigned to the non-damaged substrate below the ion penetration depth. The B component at ∼286.0 eV originates in the damaged phase and the sub-nitride phase (CNx: x<1). The C component at ∼287.3 eV is attributed to genuine nitrides such as C3N4. The broad N1s XPS peak at ∼400 eV splits clearly into the D (∼398.4 eV) and F (∼401.2 eV) components upon annealing at 600°C in vacuum. The splitting is caused by evaporation of the volatile E component (∼399.7 eV). The intensity of the D component was always comparable to that of the F component in both diamond and graphite cases. The origins of these components are discussed. The G component may be due to nitrogen trapped at defects.

AB - Diamond (CVD) and graphite (HOPG) samples were nitrided at room temperature by irradiation with 300-700 eV N2+ ion beams. X-ray photoelectron spectra (XPS) were recorded in situ during the nitridation. The XPS spectra of C1s and N1s core levels are divided into three (A, B, C) and four (D, E, F, G) components, respectively. The A component at ∼284.8 eV is assigned to the non-damaged substrate below the ion penetration depth. The B component at ∼286.0 eV originates in the damaged phase and the sub-nitride phase (CNx: x<1). The C component at ∼287.3 eV is attributed to genuine nitrides such as C3N4. The broad N1s XPS peak at ∼400 eV splits clearly into the D (∼398.4 eV) and F (∼401.2 eV) components upon annealing at 600°C in vacuum. The splitting is caused by evaporation of the volatile E component (∼399.7 eV). The intensity of the D component was always comparable to that of the F component in both diamond and graphite cases. The origins of these components are discussed. The G component may be due to nitrogen trapped at defects.

KW - Atom-solid reactions

KW - Diamond

KW - Graphite

KW - Ion implantation

KW - Nitrides

KW - X-ray photoelectron spectroscopy

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UR - http://www.scopus.com/inward/citedby.url?scp=0035922869&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(01)01430-3

DO - 10.1016/S0039-6028(01)01430-3

M3 - Article

AN - SCOPUS:0035922869

SN - 0039-6028

VL - 492

SP - 315

EP - 328

JO - Surface Science

JF - Surface Science

IS - 3

ER -

XPS study of nitridation of diamond and graphite with a nitrogen ion beam

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Keywords

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