XPS study of H-terminated silicon surface under inert gas and UHV annealing

Kazumasa Kawase, Junji Tanimura, Hiroshi Kurokawa, Kazutoshi Wakao, Masao Inoue, Hiroshi Umeda, Akinobu Teramoto

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21 Citations (Scopus)

Abstract

We have investigated the changes of chemical bonding states of an H-terminated silicon surface under inert gas (Ar,N2) and ultrahigh vacuum (UHV) annealing using X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). SiC is formed (corresponding to ∼0.1 monolayer) under inert gas and UHV annealing at around 500°C, which is coincident with the temperature of the dangling bonds formation at the silicon surface by hydrogen desorption, whereas SiC is not formed under O2 annealing. From the precise analysis using a combination of XPS and TDS, the SiC formation is related to the reaction between the silicon surface and the organic contamination that is unavoidably adsorbed during air exposure. We also studied the electrical properties of metal oxide semiconductor capacitors with a chemical vapor deposited silicon oxide gate insulator formed on Ar- and O 2-annealed silicon surfaces. Ar preannealing increases the leakage current by approximately 10-4 times compared with O2 annealing.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume152
Issue number2
DOIs
Publication statusPublished - 2005 Mar 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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