The important results necessary for the control of the SiO2/Si interface structure in atomic scale have been obtained recently. In the present paper the structural imperfections in the ultrathin oxide, which can not be determined uniquely by XPS, in addition to the early stage of interface formation are discussed. The Si2p photoelectron spectra arising from Si-H bonds in the oxide was confirmed by FT-IR-ATR spectroscopy. The Si2p photoelectron spectra arising from Si-Si bonds in the oxide was confirmed from the measurement of reflectance in vacuum ultraviolet.
|Number of pages||3|
|Publication status||Published - 1992 Jan 1|
|Event||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn|
Duration: 1992 Aug 26 → 1992 Aug 28
|Other||Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92|
|Period||92/8/26 → 92/8/28|
ASJC Scopus subject areas