XPS characterization of SiO2Si interfaces

Takeo Hattori

    Research output: Contribution to conferencePaperpeer-review

    Abstract

    The important results necessary for the control of the SiO2/Si interface structure in atomic scale have been obtained recently. In the present paper the structural imperfections in the ultrathin oxide, which can not be determined uniquely by XPS, in addition to the early stage of interface formation are discussed. The Si2p photoelectron spectra arising from Si-H bonds in the oxide was confirmed by FT-IR-ATR spectroscopy. The Si2p photoelectron spectra arising from Si-Si bonds in the oxide was confirmed from the measurement of reflectance in vacuum ultraviolet.

    Original languageEnglish
    Pages190-192
    Number of pages3
    DOIs
    Publication statusPublished - 1992 Jan 1
    EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
    Duration: 1992 Aug 261992 Aug 28

    Other

    OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
    CityTsukuba, Jpn
    Period92/8/2692/8/28

    ASJC Scopus subject areas

    • Engineering(all)

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