XPS characterization of SiO2Si interfaces

Takeo Hattori

doi:10.7567/ssdm.1992.s-v-2

XPS characterization of SiO₂Si interfaces

Takeo Hattori

Research output: Contribution to conference › Paper › peer-review

Abstract

The important results necessary for the control of the SiO₂/Si interface structure in atomic scale have been obtained recently. In the present paper the structural imperfections in the ultrathin oxide, which can not be determined uniquely by XPS, in addition to the early stage of interface formation are discussed. The Si2p photoelectron spectra arising from Si-H bonds in the oxide was confirmed by FT-IR-ATR spectroscopy. The Si2p photoelectron spectra arising from Si-Si bonds in the oxide was confirmed from the measurement of reflectance in vacuum ultraviolet.

Original language	English
Pages	190-192
Number of pages	3
DOIs	https://doi.org/10.7567/ssdm.1992.s-v-2
Publication status	Published - 1992 Jan 1
Event	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn Duration: 1992 Aug 26 → 1992 Aug 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

Engineering(all)

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title = "XPS characterization of SiO2Si interfaces",

abstract = "The important results necessary for the control of the SiO2/Si interface structure in atomic scale have been obtained recently. In the present paper the structural imperfections in the ultrathin oxide, which can not be determined uniquely by XPS, in addition to the early stage of interface formation are discussed. The Si2p photoelectron spectra arising from Si-H bonds in the oxide was confirmed by FT-IR-ATR spectroscopy. The Si2p photoelectron spectra arising from Si-Si bonds in the oxide was confirmed from the measurement of reflectance in vacuum ultraviolet.",

author = "Takeo Hattori",

year = "1992",

month = jan,

day = "1",

doi = "10.7567/ssdm.1992.s-v-2",

language = "English",

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note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

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N2 - The important results necessary for the control of the SiO2/Si interface structure in atomic scale have been obtained recently. In the present paper the structural imperfections in the ultrathin oxide, which can not be determined uniquely by XPS, in addition to the early stage of interface formation are discussed. The Si2p photoelectron spectra arising from Si-H bonds in the oxide was confirmed by FT-IR-ATR spectroscopy. The Si2p photoelectron spectra arising from Si-Si bonds in the oxide was confirmed from the measurement of reflectance in vacuum ultraviolet.

AB - The important results necessary for the control of the SiO2/Si interface structure in atomic scale have been obtained recently. In the present paper the structural imperfections in the ultrathin oxide, which can not be determined uniquely by XPS, in addition to the early stage of interface formation are discussed. The Si2p photoelectron spectra arising from Si-H bonds in the oxide was confirmed by FT-IR-ATR spectroscopy. The Si2p photoelectron spectra arising from Si-Si bonds in the oxide was confirmed from the measurement of reflectance in vacuum ultraviolet.

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