XPS and STM studies on initial oxidation of Si(110)-16×2

Maki Suemitsu; Hideaki Toģashi; Atsushi Kato; Yuya Takahashi; Atsushi Konno; Yoshihisa Yamamoto; Yuden Teraoka; Akitaka Yoshigoe; Hidehito Asaoka

XPS and STM studies on initial oxidation of Si(110)-16×2

Maki Suemitsu, Hideaki Toģashi, Atsushi Kato, Yuya Takahashi, Atsushi Konno, Yoshihisa Yamamoto, Yuden Teraoka, Akitaka Yoshigoe, Hidehito Asaoka

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The initial oxidation of Si(110)-16×2 clean surface has been investigated by using realtime synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
Pages	19-25
Number of pages	7
Publication status	Published - 2007
Event	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States Duration: 2007 Apr 9 → 2007 Apr 13

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	996
ISSN (Print)	0272-9172

Other

Other	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	07/4/9 → 07/4/13

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Suemitsu, M., Toģashi, H., Kato, A., Takahashi, Y., Konno, A., Yamamoto, Y., Teraoka, Y., Yoshigoe, A., & Asaoka, H. (2007). XPS and STM studies on initial oxidation of Si(110)-16×2. In Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies (pp. 19-25). (Materials Research Society Symposium Proceedings; Vol. 996).

XPS and STM studies on initial oxidation of Si(110)-16×2. / Suemitsu, Maki; Toģashi, Hideaki; Kato, Atsushi et al.

Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. 2007. p. 19-25 (Materials Research Society Symposium Proceedings; Vol. 996).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suemitsu, M, Toģashi, H, Kato, A, Takahashi, Y, Konno, A, Yamamoto, Y, Teraoka, Y, Yoshigoe, A & Asaoka, H 2007, XPS and STM studies on initial oxidation of Si(110)-16×2. in Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. Materials Research Society Symposium Proceedings, vol. 996, pp. 19-25, Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting, San Francisco, CA, United States, 07/4/9.

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abstract = "The initial oxidation of Si(110)-16×2 clean surface has been investigated by using realtime synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.",

author = "Maki Suemitsu and Hideaki Toģashi and Atsushi Kato and Yuya Takahashi and Atsushi Konno and Yoshihisa Yamamoto and Yuden Teraoka and Akitaka Yoshigoe and Hidehito Asaoka",

year = "2007",

language = "English",

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AU - Suemitsu, Maki

AU - Toģashi, Hideaki

AU - Kato, Atsushi

AU - Takahashi, Yuya

AU - Konno, Atsushi

AU - Yamamoto, Yoshihisa

AU - Teraoka, Yuden

AU - Yoshigoe, Akitaka

AU - Asaoka, Hidehito

PY - 2007

Y1 - 2007

N2 - The initial oxidation of Si(110)-16×2 clean surface has been investigated by using realtime synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.

AB - The initial oxidation of Si(110)-16×2 clean surface has been investigated by using realtime synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.

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M3 - Conference contribution

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T3 - Materials Research Society Symposium Proceedings

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BT - Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies

T2 - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting

Y2 - 9 April 2007 through 13 April 2007

ER -

XPS and STM studies on initial oxidation of Si(110)-16×2

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