TY - GEN
T1 - XPS and STM studies on initial oxidation of Si(110)-16×2
AU - Suemitsu, Maki
AU - Toģashi, Hideaki
AU - Kato, Atsushi
AU - Takahashi, Yuya
AU - Konno, Atsushi
AU - Yamamoto, Yoshihisa
AU - Teraoka, Yuden
AU - Yoshigoe, Akitaka
AU - Asaoka, Hidehito
PY - 2007
Y1 - 2007
N2 - The initial oxidation of Si(110)-16×2 clean surface has been investigated by using realtime synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.
AB - The initial oxidation of Si(110)-16×2 clean surface has been investigated by using realtime synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.
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M3 - Conference contribution
AN - SCOPUS:70349903115
SN - 9781605604282
T3 - Materials Research Society Symposium Proceedings
SP - 19
EP - 25
BT - Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
T2 - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
Y2 - 9 April 2007 through 13 April 2007
ER -