XPS and STM studies on initial oxidation of Si(110)-16×2

Maki Suemitsu, Hideaki Toģashi, Atsushi Kato, Yuya Takahashi, Atsushi Konno, Yoshihisa Yamamoto, Yuden Teraoka, Akitaka Yoshigoe, Hidehito Asaoka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The initial oxidation of Si(110)-16×2 clean surface has been investigated by using realtime synchrotron-radiation photoemission spectroscopy and scanning tunneling microscopy. The Si(110) initial oxidation is characterized by its unique rapid oxidation right after the introduction of oxygen molecules, which is most likely attributed to the preferential reactions at the pentagon pairs of the 16×2 reconstruction.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
Pages19-25
Number of pages7
Publication statusPublished - 2007
EventCharacterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2007 Apr 92007 Apr 13

Publication series

NameMaterials Research Society Symposium Proceedings
Volume996
ISSN (Print)0272-9172

Other

OtherCharacterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period07/4/907/4/13

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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