X-ray topographic observation of dislocation generation at the seed/crystal interface of Czochralski-grown Si highly doped with B impurity

Ichiro Yonenaga, T. Taishi, X. Huang, K. Hoshikawa

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Dislocation generation in the initial stage of Czochralski-grown Si crystals doped with B in various concentrations was observed by means of X-ray topography. Slip dislocations were generated due to the thermal stress at the dipping stage in the seed and in a crystal doped with B in the concentration lower than 1 × 1018 cm-3. Misfit dislocations were generated and penetrated into the crystal when the difference of B concentration between the seed and crystal was higher than ≈ 8 × 1018 cm-3.

Original languageEnglish
Pages (from-to)192-195
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume91-92
DOIs
Publication statusPublished - 2002 Apr 30

Keywords

  • Czochralski growth
  • Defect formation
  • Doping effect
  • Misfit dislocations
  • Silicon
  • X-ray topography

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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