X-ray photoemission study of SiO2/Si/Si0.55Ge 0.45/Si heterostructures

Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


An SiO2/Si-cap/Si0.55Ge0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O2 + H2 gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using highresolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.

Original languageEnglish
Pages (from-to)680-685
Number of pages6
JournalIEICE Transactions on Electronics
Issue number5
Publication statusPublished - 2013 May


  • Chemical bonding features
  • Heterostructure
  • Silicon germanium
  • Valence band alignment
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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