X-ray photoemission study of SiO2/Si/Si0.55Ge 0.45/Si heterostructures

Akio Ohta; Katsunori Makihara; Seiichi Miyazaki; Masao Sakuraba; Junichi Murota

doi:10.1587/transele.E96.C.680

X-ray photoemission study of SiO₂/Si/Si_0.55Ge _0.45/Si heterostructures

Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, Masao Sakuraba, Junichi Murota

Information Devices Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

An SiO₂/Si-cap/Si_0.55Ge_0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O₂ + H₂ gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using highresolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.

Original language	English
Pages (from-to)	680-685
Number of pages	6
Journal	IEICE Transactions on Electronics
Volume	E96-C
Issue number	5
DOIs	https://doi.org/10.1587/transele.E96.C.680
Publication status	Published - 2013 May

Keywords

Chemical bonding features
Heterostructure
Silicon germanium
Valence band alignment
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1587/transele.E96.C.680

Cite this

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title = "X-ray photoemission study of SiO2/Si/Si0.55Ge 0.45/Si heterostructures",

abstract = "An SiO2/Si-cap/Si0.55Ge0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O2 + H2 gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using highresolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.",

keywords = "Chemical bonding features, Heterostructure, Silicon germanium, Valence band alignment, X-ray photoelectron spectroscopy",

author = "Akio Ohta and Katsunori Makihara and Seiichi Miyazaki and Masao Sakuraba and Junichi Murota",

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T1 - X-ray photoemission study of SiO2/Si/Si0.55Ge 0.45/Si heterostructures

AU - Ohta, Akio

AU - Makihara, Katsunori

AU - Miyazaki, Seiichi

AU - Sakuraba, Masao

AU - Murota, Junichi

PY - 2013/5

Y1 - 2013/5

N2 - An SiO2/Si-cap/Si0.55Ge0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O2 + H2 gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using highresolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.

AB - An SiO2/Si-cap/Si0.55Ge0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O2 + H2 gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using highresolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.

KW - Chemical bonding features

KW - Heterostructure

KW - Silicon germanium

KW - Valence band alignment

KW - X-ray photoelectron spectroscopy

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