An SiO2/Si-cap/Si0.55Ge0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O2 + H2 gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using highresolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.
- Chemical bonding features
- Silicon germanium
- Valence band alignment
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering