X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300°C

M. Shioji, T. Shiraishi, K. Takahashi, H. Nohira, K. Azuma, Y. Nakata, Y. Takata, S. Shin, K. Kobayashi, T. Hattori

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    17 Citations (Scopus)

    Abstract

    The SiO2/Si interface structures, interface state densities and uniformities of oxide films formed by three kinds of atomic oxygen at 300 °C, were investigated. The x-ray photoelectron spectroscopy and energy loss spectroscopy analysis were used for the study. The uniformity of the films were found to be strongly dependent on the oxidation process, while the total amount of suboxides was found to be weakly dependent on the oxidation process. It was also observed that the photo-oxide/Si interface mainly consisted of Si 1+ and Si3+, which indicated that the SiO2/Si interface was covered by {111} facets.

    Original languageEnglish
    Pages (from-to)3756-3758
    Number of pages3
    JournalApplied Physics Letters
    Volume84
    Issue number19
    DOIs
    Publication statusPublished - 2004 May 10

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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