X-ray photoelectron spectroscopy study of dielectric constant for Si compounds

K. Hirose, M. Kihara, D. Kobayashi, H. Okamoto, S. Shinagawa, H. Nohira, E. Ikenaga, M. Higuchi, A. Teramoto, S. Sugawa, T. Ohmi, Takeo Hattori

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Abstract

The authors measure the difference of core-level binding energy shifts for Si 1s and Si 2p, Δ E1s -Δ E2p, for various Si compounds using high-resolution high-energy synchrotron radiation. They find that the Δ E1s -Δ E2p values are in very good correlation with the dielectric constant values of the Si compounds. Using this relation, they deduce the local dielectric constant for each of the Si intermediate oxidation states formed at the Si O2 Si interface. The results are in good agreement with values predicted by a first-principles calculation.

Original languageEnglish
Article number154103
JournalApplied Physics Letters
Volume89
Issue number15
DOIs
Publication statusPublished - 2006 Oct 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hirose, K., Kihara, M., Kobayashi, D., Okamoto, H., Shinagawa, S., Nohira, H., Ikenaga, E., Higuchi, M., Teramoto, A., Sugawa, S., Ohmi, T., & Hattori, T. (2006). X-ray photoelectron spectroscopy study of dielectric constant for Si compounds. Applied Physics Letters, 89(15), [154103]. https://doi.org/10.1063/1.2361177