X-ray photoelectron spectroscopy of highly conducting and amorphous osmium dioxide thin films

Yuko Hayakawa; Koichi Fukuzaki; Shigemi Kohiki; Yuko Shibata; Takaaki Matsuo; Kazuaki Wagatsuma; Masaoki Oku

doi:10.1016/S0040-6090(98)01612-5

X-ray photoelectron spectroscopy of highly conducting and amorphous osmium dioxide thin films

Yuko Hayakawa, Koichi Fukuzaki, Shigemi Kohiki, Yuko Shibata, Takaaki Matsuo, Kazuaki Wagatsuma, Masaoki Oku

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report characterization of highly conducting and amorphous osmium dioxide thin films. The films deposited by glow discharge of osmium tetroxide showed no peaks in X-ray diffraction and homogeneous distribution of osmium and oxygen atoms in depth profile by Auger electron spectroscopy. The amorphous Os-O films were highly conducting (<5 × 10^-3 Ω cm), and the conductivity was almost temperature independent. High-resolution X-ray photoelectron spectroscopy revealed that the films were osmium dioxide (OsO₂). Argon ion bombardment of the film reduced the Os⁴⁺ to metal Os⁰ via a transition state (Os^1.6+).

Original language	English
Pages (from-to)	56-59
Number of pages	4
Journal	Thin Solid Films
Volume	347
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01612-5
Publication status	Published - 1999 Jun 22

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(98)01612-5

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title = "X-ray photoelectron spectroscopy of highly conducting and amorphous osmium dioxide thin films",

abstract = "We report characterization of highly conducting and amorphous osmium dioxide thin films. The films deposited by glow discharge of osmium tetroxide showed no peaks in X-ray diffraction and homogeneous distribution of osmium and oxygen atoms in depth profile by Auger electron spectroscopy. The amorphous Os-O films were highly conducting (<5 × 10-3 Ω cm), and the conductivity was almost temperature independent. High-resolution X-ray photoelectron spectroscopy revealed that the films were osmium dioxide (OsO2). Argon ion bombardment of the film reduced the Os4+ to metal Os0 via a transition state (Os1.6+).",

author = "Yuko Hayakawa and Koichi Fukuzaki and Shigemi Kohiki and Yuko Shibata and Takaaki Matsuo and Kazuaki Wagatsuma and Masaoki Oku",

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T1 - X-ray photoelectron spectroscopy of highly conducting and amorphous osmium dioxide thin films

AU - Hayakawa, Yuko

AU - Fukuzaki, Koichi

AU - Kohiki, Shigemi

AU - Shibata, Yuko

AU - Matsuo, Takaaki

AU - Wagatsuma, Kazuaki

AU - Oku, Masaoki

PY - 1999/6/22

Y1 - 1999/6/22

N2 - We report characterization of highly conducting and amorphous osmium dioxide thin films. The films deposited by glow discharge of osmium tetroxide showed no peaks in X-ray diffraction and homogeneous distribution of osmium and oxygen atoms in depth profile by Auger electron spectroscopy. The amorphous Os-O films were highly conducting (<5 × 10-3 Ω cm), and the conductivity was almost temperature independent. High-resolution X-ray photoelectron spectroscopy revealed that the films were osmium dioxide (OsO2). Argon ion bombardment of the film reduced the Os4+ to metal Os0 via a transition state (Os1.6+).

AB - We report characterization of highly conducting and amorphous osmium dioxide thin films. The films deposited by glow discharge of osmium tetroxide showed no peaks in X-ray diffraction and homogeneous distribution of osmium and oxygen atoms in depth profile by Auger electron spectroscopy. The amorphous Os-O films were highly conducting (<5 × 10-3 Ω cm), and the conductivity was almost temperature independent. High-resolution X-ray photoelectron spectroscopy revealed that the films were osmium dioxide (OsO2). Argon ion bombardment of the film reduced the Os4+ to metal Os0 via a transition state (Os1.6+).

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JO - Thin Solid Films

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X-ray photoelectron spectroscopy of highly conducting and amorphous osmium dioxide thin films

Abstract

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