X-ray photoelectron spectroscopy of highly conducting and amorphous osmium dioxide thin films

Yuko Hayakawa, Koichi Fukuzaki, Shigemi Kohiki, Yuko Shibata, Takaaki Matsuo, Kazuaki Wagatsuma, Masaoki Oku

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

We report characterization of highly conducting and amorphous osmium dioxide thin films. The films deposited by glow discharge of osmium tetroxide showed no peaks in X-ray diffraction and homogeneous distribution of osmium and oxygen atoms in depth profile by Auger electron spectroscopy. The amorphous Os-O films were highly conducting (<5 × 10-3 Ω cm), and the conductivity was almost temperature independent. High-resolution X-ray photoelectron spectroscopy revealed that the films were osmium dioxide (OsO2). Argon ion bombardment of the film reduced the Os4+ to metal Os0 via a transition state (Os1.6+).

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalThin Solid Films
Volume347
Issue number1-2
DOIs
Publication statusPublished - 1999 Jun 22

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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