X-ray photoelectron spectroscopy of highly conducting and amorphous osmium dioxide thin films

Yuko Hayakawa, Koichi Fukuzaki, Shigemi Kohiki, Yuko Shibata, Takaaki Matsuo, Kazuaki Wagatsuma, Masaoki Oku

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We report characterization of highly conducting and amorphous osmium dioxide thin films. The films deposited by glow discharge of osmium tetroxide showed no peaks in X-ray diffraction and homogeneous distribution of osmium and oxygen atoms in depth profile by Auger electron spectroscopy. The amorphous Os-O films were highly conducting (<5 × 10-3 Ω cm), and the conductivity was almost temperature independent. High-resolution X-ray photoelectron spectroscopy revealed that the films were osmium dioxide (OsO2). Argon ion bombardment of the film reduced the Os4+ to metal Os0 via a transition state (Os1.6+).

Original languageEnglish
Pages (from-to)56-59
Number of pages4
JournalThin Solid Films
Volume347
Issue number1-2
DOIs
Publication statusPublished - 1999 Jun 22

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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