X-ray photoelectron spectroscopic study of nitrogen depth profile in radical nitrided silicon oxynitride film

Kazumasa Kawase, Hiroshi Umeda, Masao Inoue, Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

Abstract

The intensities of emission from N2+ and NH radicals in Ar/N2, Xe/N2 Ar/NH3 or Xe/NH3 plasma excited by microwave and the chemical bonding states of nitrogen atoms in silicon oxynitride film nitrided by using these plasmas were investigated. Depth profiles of composition and chemical structures in the oxynitride films were investigated by X-ray photoelectron spectroscopy combined with step etching in HF solution. The emission intensities from N2+ radical generated in Xe/N2, Ar/NH3 or Xe/NH3 plasma are less than a quarter of that from N2+ radical generated in Ar/N2 plasma. The emission from NH radical detected in Ar/NH 3 or Xe/NH3 plasma is not detected in Xe/N2 or Ar/N2 plasma. The order of the nitrogen concentration near the film/substrate interface is Ar/NH3 > Xe/NH3 > Ar/N2 > Xe/N2 plasma. Therefore, it is important for the reduction of the nitrogen concentration near the film/substrate interface to use Xe/N2 plasma in which both of the generation efficiencies of N2+ and NH radicals are low.

Original languageEnglish
Pages (from-to)672-677
Number of pages6
JournalShinku/Journal of the Vacuum Society of Japan
Volume50
Issue number11
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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