Abstract
A clean InP(001) surface treated by ion-bombardment and annealing (IBA) has been studied by X-ray photoelectron diffraction (XPD) and synchrotron radiation based photoemission spectroscopy (SRPES). The XPD pattern of In 3d5/2 (measured at 55° from the surface normal) is compared with a calculated XPD pattern obtained from a single-scattering cluster simulation. Our results indicate that IBA-treated InP(001) exhibits a (2 x 4) surface reconstruction. That is, the two-fold and four-fold directions correspond to the [110] and [110] axes, respectively. For the SRPES study, In 4d core-level spectra (hv = 70 eV) were collected at a variety of photoemission angles. Four spin-orbit doublets were necessary to obtain a high-quality fit to the photoemission spectra. As the detection angle was changed toward the surface parallel, a component having a lower binding energy by 0.70 eV than that of the bulk undergoes a dramatic intensity increase. On the basis of the energy shift and polar angle dependence of this component, we suggest that it arises from surface-layer indium atoms bonded to other indium atoms. The origins of other components are discussed.
Original language | English |
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Pages (from-to) | 625-630 |
Number of pages | 6 |
Journal | Surface Science |
Volume | 412-413 |
DOIs | |
Publication status | Published - 1998 Sep 3 |
Keywords
- Indium phosphide
- Low index single crystal surfaces
- Photoelectron diffraction
- Semiconductor surfaces
- Surface structure
- Synchrotron radiation photoelectron spectroscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry