TY - JOUR
T1 - X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation
AU - Ishii, H.
AU - Hasegawa, H.
AU - Ishii, A.
AU - Ohno, H.
N1 - Funding Information:
The present work was supported by a Grant-in-Aid for the Specially Promoted Research (No. 60065002) from the Ministry of Education, Science and Culture.
PY - 1990/1
Y1 - 1990/1
N2 - An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (ii) an Al2O3/native oxide/InP structure and (iii) a photo-CVD SiN/native oxide/InP structure. It is shown that condensed indium phosphate plays an important role in structures (i) and (ii). The composition control of the phosphate layer by anodization is demonstrated, and is explained by a simple mechinism of field driven movement of indium species. A correlation between phosphate composition and interface state density is found in structure (iii).
AB - An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (ii) an Al2O3/native oxide/InP structure and (iii) a photo-CVD SiN/native oxide/InP structure. It is shown that condensed indium phosphate plays an important role in structures (i) and (ii). The composition control of the phosphate layer by anodization is demonstrated, and is explained by a simple mechinism of field driven movement of indium species. A correlation between phosphate composition and interface state density is found in structure (iii).
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U2 - 10.1016/0169-4332(89)90089-5
DO - 10.1016/0169-4332(89)90089-5
M3 - Article
AN - SCOPUS:0024767765
VL - 41-42
SP - 390
EP - 394
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - C
ER -