X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation

H. Ishii; H. Hasegawa; A. Ishii; H. Ohno

doi:10.1016/0169-4332(89)90089-5

X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation

H. Ishii, H. Hasegawa, A. Ishii, H. Ohno

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (ii) an Al₂O₃/native oxide/InP structure and (iii) a photo-CVD SiN/native oxide/InP structure. It is shown that condensed indium phosphate plays an important role in structures (i) and (ii). The composition control of the phosphate layer by anodization is demonstrated, and is explained by a simple mechinism of field driven movement of indium species. A correlation between phosphate composition and interface state density is found in structure (iii).

Original language	English
Pages (from-to)	390-394
Number of pages	5
Journal	Applied Surface Science
Volume	41-42
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(89)90089-5
Publication status	Published - 1990 Jan
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation",

abstract = "An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (ii) an Al2O3/native oxide/InP structure and (iii) a photo-CVD SiN/native oxide/InP structure. It is shown that condensed indium phosphate plays an important role in structures (i) and (ii). The composition control of the phosphate layer by anodization is demonstrated, and is explained by a simple mechinism of field driven movement of indium species. A correlation between phosphate composition and interface state density is found in structure (iii).",

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T1 - X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation

AU - Ishii, H.

AU - Hasegawa, H.

AU - Ishii, A.

AU - Ohno, H.

PY - 1990/1

Y1 - 1990/1

N2 - An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (ii) an Al2O3/native oxide/InP structure and (iii) a photo-CVD SiN/native oxide/InP structure. It is shown that condensed indium phosphate plays an important role in structures (i) and (ii). The composition control of the phosphate layer by anodization is demonstrated, and is explained by a simple mechinism of field driven movement of indium species. A correlation between phosphate composition and interface state density is found in structure (iii).

AB - An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (ii) an Al2O3/native oxide/InP structure and (iii) a photo-CVD SiN/native oxide/InP structure. It is shown that condensed indium phosphate plays an important role in structures (i) and (ii). The composition control of the phosphate layer by anodization is demonstrated, and is explained by a simple mechinism of field driven movement of indium species. A correlation between phosphate composition and interface state density is found in structure (iii).

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