X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation

H. Ishii, H. Hasegawa, A. Ishii, H. Ohno

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14 Citations (Scopus)

Abstract

An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (ii) an Al2O3/native oxide/InP structure and (iii) a photo-CVD SiN/native oxide/InP structure. It is shown that condensed indium phosphate plays an important role in structures (i) and (ii). The composition control of the phosphate layer by anodization is demonstrated, and is explained by a simple mechinism of field driven movement of indium species. A correlation between phosphate composition and interface state density is found in structure (iii).

Original languageEnglish
Pages (from-to)390-394
Number of pages5
JournalApplied Surface Science
Volume41-42
Issue numberC
DOIs
Publication statusPublished - 1990 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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