X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grown by intermittent injection of TEGa/AsH3 in ultra high vacuum

Yutaka Oyama, Jun Ichi Nishizawa, Kohichi Seo, Ken Suto

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

This paper reports the results of X-ray multi-crystal diffractometry analysis of heavily Te-doped (100)-GaAs epitaxial thin layers grown by intermittent injection of TEGa/AsH3 in an ultra high vacuum. It is shown that the differential lattice strain in 〈100〉 direction was increased monotonically with increase of impurity concentration in the range of 5 × 1019-5 × 1020 cm-3, but full-width at half-maximum of rocking curve was kept constant at about 360s of arc. Independent of the impurity concentration, reflection X-ray topography does not reveal the formation of misfit dislocation. Reciprocal lattice mapping method is also applied to clarify the origin of double peaks in X-ray rocking curve. In addition with electrical measurement results, defect formation mechanism in heavily Te-doped GaAs thin layers are discussed.

Original languageEnglish
Pages (from-to)221-228
Number of pages8
JournalJournal of Crystal Growth
Volume213
Issue number3-4
DOIs
Publication statusPublished - 2000 Jun 1

Keywords

  • Epitaxy
  • GaAs
  • Impurity doping
  • MLE
  • Strain
  • X-ray diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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