X-ray mask distortion induced in back-etching preceding subtractive fabrication: Resist and absorber stress effect

Shinji Tsuboi, Yoshio Yamashita, Tadashi Matsuo, Tsuneaki Ohta, Tsutomu Shoki, Takuya Yoshihara, Takao Taguchi, Soichiro Mitsui, Shuichi Noda, Kazuo Suzuki, Hiroshi Hoga, Yoh Ichi Yamaguchi, Katsumi Suzuki

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

The influence of resist and absorber stress distributions on X-ray mask distortion induced during back-etching preceding subtractive fabrication is analyzed experimentally and simulated. The stress distribution (gradient) in a resist and/or that in an absorber film causes larger pattern displacement rather than the film average stress. Some resists have considerably high stress after coating on a wafer, and this stress also changes during exposure, causing local pattern displacements. However, use of chemically amplified resist systems, in which the reaction after exposure is limited to a small amount acid generation, might solve this problem. Low-stress positive-tone resists should thus be developed.

Original languageEnglish
Pages (from-to)2845-2850
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number5 SUPPL. A
Publication statusPublished - 1996 May 1

Keywords

  • Absorber
  • Back-etching
  • Preceding
  • Resist
  • SiC
  • SiN
  • Stress distribution (gradient)
  • Subtractive
  • X-ray lithography
  • X-ray mask

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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