X-ray irradiation-induced carrier doping effects in organic dimer-Mott insulators

Takahiko Sasaki; Hajime Oizumi; Naoki Yoneyama; Norio Kobayashi; Naoki Toyota

doi:10.1143/JPSJ.76.123701

X-ray irradiation-induced carrier doping effects in organic dimer-Mott insulators

Takahiko Sasaki, Hajime Oizumi, Naoki Yoneyama, Norio Kobayashi, Naoki Toyota

Institute for Materials Research (IMR) (institute affiliation only)

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators κ-(ET) ₂X with X = Cu[N(CN) ₂]Cl and Cu ₂(CN) ₃. For κ-(ET) ₂Cu[N(CN) ₂]Cl, we have observed a large decrease of the resistivity by 40% with the irradiation at 300K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.

Original language	English
Article number	123701
Journal	journal of the physical society of japan
Volume	76
Issue number	12
DOIs	https://doi.org/10.1143/JPSJ.76.123701
Publication status	Published - 2007 Dec 1

Keywords

BEDT-TTF
Carrier doping
Mott insulator
Organic conductor
X-ray irradiation

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1143/JPSJ.76.123701

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title = "X-ray irradiation-induced carrier doping effects in organic dimer-Mott insulators",

abstract = "We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators κ-(ET) 2X with X = Cu[N(CN) 2]Cl and Cu 2(CN) 3. For κ-(ET) 2Cu[N(CN) 2]Cl, we have observed a large decrease of the resistivity by 40% with the irradiation at 300K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.",

keywords = "BEDT-TTF, Carrier doping, Mott insulator, Organic conductor, X-ray irradiation",

author = "Takahiko Sasaki and Hajime Oizumi and Naoki Yoneyama and Norio Kobayashi and Naoki Toyota",

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T1 - X-ray irradiation-induced carrier doping effects in organic dimer-Mott insulators

AU - Sasaki, Takahiko

AU - Oizumi, Hajime

AU - Yoneyama, Naoki

AU - Kobayashi, Norio

AU - Toyota, Naoki

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators κ-(ET) 2X with X = Cu[N(CN) 2]Cl and Cu 2(CN) 3. For κ-(ET) 2Cu[N(CN) 2]Cl, we have observed a large decrease of the resistivity by 40% with the irradiation at 300K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.

AB - We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators κ-(ET) 2X with X = Cu[N(CN) 2]Cl and Cu 2(CN) 3. For κ-(ET) 2Cu[N(CN) 2]Cl, we have observed a large decrease of the resistivity by 40% with the irradiation at 300K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.

KW - BEDT-TTF

KW - Carrier doping

KW - Mott insulator

KW - Organic conductor

KW - X-ray irradiation

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X-ray irradiation-induced carrier doping effects in organic dimer-Mott insulators

Abstract

Keywords

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