X-ray induced insulator-metal transition in a thin film of electron-doped VO2

K. Shibuya, D. Okuyama, R. Kumai, Y. Yamasaki, H. Nakao, Y. Murakami, Y. Taguchi, T. Arima, M. Kawasaki, Y. Tokura

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We have observed a persistent x-ray induced insulator-metal transition at low temperature for an epitaxial film of electron-doped VO2, a material as characterized by strong electron-electron and electron-lattice interactions. The volume fraction of the photo-generated metallic patches, ranging from 0 to 100% of the whole film, can be scaled well with the total dose of x-ray irradiation, irrespective of the x-ray intensity. This indicates the monomolecular process of the insulator-metal phase conversion that corresponds to the instantaneous creation of the metallic patch extending over as many as 105 V sites per one x-ray absorbed photon. The typical percolation behavior is observed in the conductivity change with the finely photo-controlled volume ratio of the metallic phase.

Original languageEnglish
Article number165108
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
Publication statusPublished - 2011 Oct 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'X-ray induced insulator-metal transition in a thin film of electron-doped VO2'. Together they form a unique fingerprint.

Cite this