X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy

A. Sato, K. Ohtani, R. Terauchi, Y. Ohno, F. Matsukura, H. Ohno

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

Interface bond structures of InAs/AlSb superlattices (SLs) have been investigated by X-ray diffraction (XRD) and photoluminescence (PL) measurements. For heterointerfaces with different anion composition AsxSb1-x XRD data are found to be in good agreement with simulation results assuming the presence of 1 monolayer InAsxSb1-x at the interfaces. For the sample with an AlAs interface bond, no good fit is obtained for XRD. This indicates that the growth of an InAs/AlSb SL is disrupted at the AlAs interfaces. Correlation between interface configurations and their optical properties is also discussed.

Original languageEnglish
Pages (from-to)861-863
Number of pages3
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 311998 Sep 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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