X-band filters utilizing AlN thin film bulk acoustic resonators

Motoaki Hara; Tsuyoshi Yokoyama; Masanori Ueda; Yoshio Satoh

doi:10.1109/ULTSYM.2007.291

X-band filters utilizing AlN thin film bulk acoustic resonators

Motoaki Hara, Tsuyoshi Yokoyama, Masanori Ueda, Yoshio Satoh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

23 Citations (Scopus)

Abstract

A filter with aluminum nitride thin-film bulk acoustic resonators (FBAR) for the X-band was developed. The FBAR has an air gap beneath the resonator to isolate acoustically from a substrate, and is extremely thin to operate in the X-band. The FBAR has two structural features - a sacrificial layer to make the air gap was very thin in order to prevent the resonator from cracking on the edge of the air gap, and a resonator was deformed to dome shape by stresses of the films to keep the air gap. The fabricated FBAR operated successfully with a keff of 6.40%, a resonance Q of 246, and anti-resonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1%, a minimum insertion loss of-1.7 dB, and an out-of-band rejection of -21 dB.

Original language	English
Title of host publication	2007 IEEE Ultrasonics Symposium Proceedings, IUS
Pages	1152-1155
Number of pages	4
DOIs	https://doi.org/10.1109/ULTSYM.2007.291
Publication status	Published - 2007 Dec 1
Event	2007 IEEE Ultrasonics Symposium, IUS - New York, NY, United States Duration: 2007 Oct 28 → 2007 Oct 31

Publication series

Name	Proceedings - IEEE Ultrasonics Symposium
ISSN (Print)	1051-0117

Other

Other	2007 IEEE Ultrasonics Symposium, IUS
Country/Territory	United States
City	New York, NY
Period	07/10/28 → 07/10/31

Keywords

Air gap
Aln
FBAR
Filter
X-band

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/ULTSYM.2007.291

Cite this

@inproceedings{a6ee346ed626453a9660ac9f34c21d39,

title = "X-band filters utilizing AlN thin film bulk acoustic resonators",

abstract = "A filter with aluminum nitride thin-film bulk acoustic resonators (FBAR) for the X-band was developed. The FBAR has an air gap beneath the resonator to isolate acoustically from a substrate, and is extremely thin to operate in the X-band. The FBAR has two structural features - a sacrificial layer to make the air gap was very thin in order to prevent the resonator from cracking on the edge of the air gap, and a resonator was deformed to dome shape by stresses of the films to keep the air gap. The fabricated FBAR operated successfully with a keff of 6.40%, a resonance Q of 246, and anti-resonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1%, a minimum insertion loss of-1.7 dB, and an out-of-band rejection of -21 dB.",

keywords = "Air gap, Aln, FBAR, Filter, X-band",

author = "Motoaki Hara and Tsuyoshi Yokoyama and Masanori Ueda and Yoshio Satoh",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/ULTSYM.2007.291",

language = "English",

isbn = "1424413834",

series = "Proceedings - IEEE Ultrasonics Symposium",

pages = "1152--1155",

booktitle = "2007 IEEE Ultrasonics Symposium Proceedings, IUS",

note = "2007 IEEE Ultrasonics Symposium, IUS ; Conference date: 28-10-2007 Through 31-10-2007",

}

TY - GEN

T1 - X-band filters utilizing AlN thin film bulk acoustic resonators

AU - Hara, Motoaki

AU - Yokoyama, Tsuyoshi

AU - Ueda, Masanori

AU - Satoh, Yoshio

PY - 2007/12/1

Y1 - 2007/12/1

N2 - A filter with aluminum nitride thin-film bulk acoustic resonators (FBAR) for the X-band was developed. The FBAR has an air gap beneath the resonator to isolate acoustically from a substrate, and is extremely thin to operate in the X-band. The FBAR has two structural features - a sacrificial layer to make the air gap was very thin in order to prevent the resonator from cracking on the edge of the air gap, and a resonator was deformed to dome shape by stresses of the films to keep the air gap. The fabricated FBAR operated successfully with a keff of 6.40%, a resonance Q of 246, and anti-resonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1%, a minimum insertion loss of-1.7 dB, and an out-of-band rejection of -21 dB.

AB - A filter with aluminum nitride thin-film bulk acoustic resonators (FBAR) for the X-band was developed. The FBAR has an air gap beneath the resonator to isolate acoustically from a substrate, and is extremely thin to operate in the X-band. The FBAR has two structural features - a sacrificial layer to make the air gap was very thin in order to prevent the resonator from cracking on the edge of the air gap, and a resonator was deformed to dome shape by stresses of the films to keep the air gap. The fabricated FBAR operated successfully with a keff of 6.40%, a resonance Q of 246, and anti-resonance Q of 462. The fabricated filter had a center frequency of 9.07 GHz, a fractional bandwidth of 3.1%, a minimum insertion loss of-1.7 dB, and an out-of-band rejection of -21 dB.

KW - Air gap

KW - Aln

KW - FBAR

KW - Filter

KW - X-band

UR - http://www.scopus.com/inward/record.url?scp=48149115346&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48149115346&partnerID=8YFLogxK

U2 - 10.1109/ULTSYM.2007.291

DO - 10.1109/ULTSYM.2007.291

M3 - Conference contribution

AN - SCOPUS:48149115346

SN - 1424413834

SN - 9781424413836

T3 - Proceedings - IEEE Ultrasonics Symposium

SP - 1152

EP - 1155

BT - 2007 IEEE Ultrasonics Symposium Proceedings, IUS

T2 - 2007 IEEE Ultrasonics Symposium, IUS

Y2 - 28 October 2007 through 31 October 2007

ER -

X-band filters utilizing AlN thin film bulk acoustic resonators

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Keywords

ASJC Scopus subject areas

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