Wurtzite-Derived Quaternary Oxide Semiconductor Cu2ZnGeO4: Its Structural Characteristics, Optical Properties, and Electronic Structure

Masao Kita, Issei Suzuki, Naoki Ohashi, Takahisa Omata

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The quaternary I2-II-IV-O4 semiconductor, Cu2ZnGeO4, with a wurtz-kesterite structure and 1.4 eV energy band gap has been synthesized for the first time via ion exchange of precursor Na2ZnGeO4. Its crystal structure was refined by Rietveld analysis, and the structural distortion was quantitatively evaluated based on the cation tetrahedral tilting and angle distortion indexes. The tetrahedral distortion in Cu2ZnGeO4 was smaller than in Ag2ZnGeO4 but larger than in β-CuGaO2, suggesting an indirect band gap of Cu2ZnGeO4. Density functional theory calculations using the functional of the local density approximation with corrections for on-site Coulomb interactions indicated that Cu2ZnGeO4 is an indirect semiconductor as expected from its structural feature. However, the energy difference between the direct and indirect band gaps is very small, suggesting that Cu2ZnGeO4 shows strong light absorption near the band edge.

Original languageEnglish
Pages (from-to)14277-14283
Number of pages7
JournalInorganic chemistry
Issue number22
Publication statusPublished - 2017 Nov 20

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry


Dive into the research topics of 'Wurtzite-Derived Quaternary Oxide Semiconductor Cu<sub>2</sub>ZnGeO<sub>4</sub>: Its Structural Characteristics, Optical Properties, and Electronic Structure'. Together they form a unique fingerprint.

Cite this