Writing properties of clad lines in a toggle MRAM

S. Miura, K. Shimura, N. Ohshima, R. Nebashi, T. Suzuki, H. Hada, S. Tahara, H. Aikawa, T. Ueda, T. Kajiyama, Y. Asao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.

Original languageEnglish
Pages (from-to)e933-e935
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar 1
Externally publishedYes

Keywords

  • Clad line
  • MRAM
  • Toggle memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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