Writing properties of clad lines in a toggle MRAM

S. Miura; K. Shimura; N. Ohshima; R. Nebashi; T. Suzuki; H. Hada; S. Tahara; H. Aikawa; T. Ueda; T. Kajiyama; Y. Asao

doi:10.1016/j.jmmm.2006.10.974

Writing properties of clad lines in a toggle MRAM

S. Miura, K. Shimura, N. Ohshima, R. Nebashi, T. Suzuki, H. Hada, S. Tahara, H. Aikawa, T. Ueda, T. Kajiyama, Y. Asao

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.

Original language	English
Pages (from-to)	e933-e935
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.974
Publication status	Published - 2007 Mar 1
Externally published	Yes

Keywords

Clad line
MRAM
Toggle memory

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Writing properties of clad lines in a toggle MRAM",

abstract = "We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.",

keywords = "Clad line, MRAM, Toggle memory",

author = "S. Miura and K. Shimura and N. Ohshima and R. Nebashi and T. Suzuki and H. Hada and S. Tahara and H. Aikawa and T. Ueda and T. Kajiyama and Y. Asao",

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doi = "10.1016/j.jmmm.2006.10.974",

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TY - JOUR

T1 - Writing properties of clad lines in a toggle MRAM

AU - Miura, S.

AU - Shimura, K.

AU - Ohshima, N.

AU - Nebashi, R.

AU - Suzuki, T.

AU - Hada, H.

AU - Tahara, S.

AU - Aikawa, H.

AU - Ueda, T.

AU - Kajiyama, T.

AU - Asao, Y.

PY - 2007/3/1

Y1 - 2007/3/1

N2 - We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.

AB - We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.

KW - Clad line

KW - MRAM

KW - Toggle memory

UR - http://www.scopus.com/inward/record.url?scp=33847646199&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847646199&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.10.974

DO - 10.1016/j.jmmm.2006.10.974

M3 - Article

AN - SCOPUS:33847646199

VL - 310

SP - e933-e935

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 2 SUPPL. PART 3

ER -

Writing properties of clad lines in a toggle MRAM

Abstract

Keywords

ASJC Scopus subject areas

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