Abstract
We examined the magnetic and writing properties of clad writing lines for magnetic random access memory (MRAM) devices. After fabricating them, we applied a magnetic field of 1.2 T to them at room temperature. We call this operation initialization. Initialization reduced the flop current deviation of the single magnetic tunnel junction toggle cells. We fabricated a 4-Mbit toggle memory array with the clad lines, using initialization. It exhibited a large operating margin and a reduced switching current.
Original language | English |
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Pages (from-to) | e933-e935 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 310 |
Issue number | 2 SUPPL. PART 3 |
DOIs | |
Publication status | Published - 2007 Mar 1 |
Externally published | Yes |
Keywords
- Clad line
- MRAM
- Toggle memory
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics