WP-B4 pH ISFET's Using Al2O3, Si3N4, and SiO2 Gate Thin Films

Tadayuki Matsuo, Masayoshi Esashi, Hiroshi Abe

Research output: Contribution to journalArticle

51 Citations (Scopus)
Original languageEnglish
Pages (from-to)1856-1857
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume26
Issue number11
DOIs
Publication statusPublished - 1979 Nov

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this