WP-B4 pH ISFET's Using Al2O3, Si3N4, and SiO2 Gate Thin Films

Tadayuki Matsuo, Masayoshi Esashi, Hiroshi Abe

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)
Original languageEnglish
Pages (from-to)1856-1857
Number of pages2
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 1979 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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