Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions

T. Matsukawa, Y. X. Liu, M. Masahara, K. Ishii, K. Endo, H. Yamauchi, E. Sugimata, H. Takashima, T. Higashino, E. Suzuki, S. Kanemaru

Research output: Contribution to journalConference article

11 Citations (Scopus)

Abstract

Work function (φ m) of metal transistor gates was controlled by using Al-Ni and Ni-Ta alloys made through an interdiffusion process, in which stacks of different metals were annealed. In addition to conventional capacitance-voltage measurements for φ m evaluation, φ m uniformity was also measured microscopically. The average φ m of the Al-Ni alloy was successfully changed compared to that of pure Al by interdiffusion at 500 °C. The φ m nonuniformity of Al-Ni, however, was problematic. Though Ni-Ta alloys required interdiffusion at a higher temperature of 700 °C, the Ni-Ta alloys had better φ m uniformity. Thus, the Ni-Ta alloy is a more suitable candidate for use in metal gates of high-integrity transistors.

Original languageEnglish
Pages (from-to)284-287
Number of pages4
JournalMicroelectronic Engineering
Volume80
Issue numberSUPPL.
DOIs
Publication statusPublished - 2005 Jun 17
Externally publishedYes
Event14th Biennial Conference on Insulating Films on Semiconductors -
Duration: 2005 Jun 222005 Jun 24

Keywords

  • Al
  • Alloy
  • Interdiffusion
  • Metal gate
  • Ni
  • Ta
  • Work function

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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  • Cite this

    Matsukawa, T., Liu, Y. X., Masahara, M., Ishii, K., Endo, K., Yamauchi, H., Sugimata, E., Takashima, H., Higashino, T., Suzuki, E., & Kanemaru, S. (2005). Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions. Microelectronic Engineering, 80(SUPPL.), 284-287. https://doi.org/10.1016/j.mee.2005.04.034