Work function control of metal gates by interdiffused Ni-Ta with high thermal stability

T. Matsukawa, Y. X. Liu, M. Masahara, K. Endo, K. Ishii, H. Yamauchi, E. Sugimata, H. Takashima, S. Kanemaru, E. Suzuki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

By using the Ni-Ta alloys fabricated by interdiffusing stacks of Ni and Ta, we have experimentally investigated the work function (φm) controllability and thermal stability required for the advanced metal gate MOSFETs. The capacitancevoltage (C-V) measurement of the interdiffused Ni/Ta and Ta/Ni stacks revealed that the φm of the Ni-Ta alloy was changed from that of pure Ni and Ta samples. The φm uniformity of the intediffused Ni-Ta alloy was found to be comparable to that of the pure Ni by observing the microscopic φm by scanning Maxwell-stress microscopy. The excellent thermal stability of the interdiffused Ta/Ni stack was revealed up to 900°C. From these experimental results, the Ni-Ta alloy is promising candidate for the metal-gate MOSFETs.

Original languageEnglish
Title of host publicationProceedings of ESSDERC 2005
Subtitle of host publication35th European Solid-State Device Research Conference
Pages109-112
Number of pages4
DOIs
Publication statusPublished - 2005 Dec 1
Externally publishedYes
EventESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France
Duration: 2005 Sep 122005 Sep 16

Publication series

NameProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume2005

Conference

ConferenceESSDERC 2005: 35th European Solid-State Device Research Conference
CountryFrance
CityGrenoble
Period05/9/1205/9/16

ASJC Scopus subject areas

  • Engineering(all)

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