Width-induced metal-insulator transition in SrVO3lateral nanowires spontaneously formed on the ultrathin film

Hirofumi Oka, Yoshinori Okada, Kenichi Kaminaga, Daichi Oka, Taro Hitosugi, Tomoteru Fukumura

Research output: Contribution to journalArticlepeer-review


We investigated lateral nanowires at the topmost layer of SrVO3 (001) ultrathin films using in situ low-temperature scanning tunneling microscopy and spectroscopy. The nanowires were spontaneously formed in the topmost layer of SrVO3 with a (2 × 2)-R45° reconstruction on the terrace of a (5 × 5)-R26.6° reconstruction. The electronic states of nanowires were significantly influenced by the nanowire width. With reducing the nanowire width from 5.5 nm to 1.7 nm, the zero-bias conductance of nanowires steeply decreased toward zero, exhibiting a metal-insulator transition possibly driven by dimensional crossover, previously observed in thickness-reduced SrVO3 ultrathin films.

Original languageEnglish
Article number051603
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2020 Aug 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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