Widely bandgap tunable amorphous Cd-Ga-O oxide semiconductors exhibiting electron mobilities ≥10-cm2-V-1-s-1

Hiroshi Yanagi, Chiyuki Sato, Yota Kimura, Issei Suzuki, Takahisa Omata, Toshio Kamiya, Hideo Hosono

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Amorphous oxide semiconductors exhibit large electron mobilities; however, their bandgaps are either too large for solar cells or too small for deep ultraviolet applications depending on the materials system. Herein, we demonstrate that amorphous Cd-Ga-O semiconductors display bandgaps covering the entire 2.5-4.3-eV region while maintaining large electron mobilities ≥10-cm2-V-1-s-1. The band alignment diagram obtained by ultraviolet photoemission spectroscopy and the bandgap values reveal that these semiconductors form type-II heterojunctions with p-type Cu2O, which is suitable for solar cells and solar-blind ultraviolet sensors.

Original languageEnglish
Article number082106
JournalApplied Physics Letters
Volume106
Issue number8
DOIs
Publication statusPublished - 2015 Feb 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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