Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

T. Matsuoka, N. Yoshimoto, T. Sasaki, A. Katsui

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209 Citations (Scopus)

Abstract

We have achieved InGaN growth on sapphire substrates at temperatures substantially higher than conventional growth temperatures for InGaN. When the growth temperature was changed from 500 (conventional) to 800° C (this work) in InGaN, the x-ray diffraction line width (full width at half maximum) decreased from 100 to 30 min. At 77 K, edge emission was observed in PL. In order to further improve crystalline quality, we have investigated ZnO as a lattice-matching substrate. First, the surface treatment and the resistance to the reducing atmosphere at high temperatures was briefly investigated. We report the first successful lattice-matched growth of InGaN. The x-ray diffraction line width of InGaN grown on ZnO was about 20% smaller than that of films grown on sapphire substrates, thus using lattice-matched substrates was shown to have an effect on improving the crystalline quality of InGaN. Single crystal InGaAlN has been also realized on sapphire substrates. The indium, gallium and aluminum contents were 2.2, 22.5 and 74.3%, respectively. The optical transmission characteristic of this InGaAlN was measured.

Original languageEnglish
Pages (from-to)157-163
Number of pages7
JournalJournal of Electronic Materials
Volume21
Issue number2
DOIs
Publication statusPublished - 1992 Feb 1
Externally publishedYes

Keywords

  • InGaAlN
  • InGaN
  • MOVPE

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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