Wide-dynamic-range magnetic sensor based on magnetic tunnel junctions using perpendicularly magnetized synthetic antiferromagnetic reference layer

T. Nakano, M. Oogane, T. Furuichi, Y. Ando

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Magnetic tunnel junctions (MTJs) with an MgO barrier, which exhibit a giant tunnel magnetoresistance (TMR) effect [1]-[4], have been intensively studied for application to various magnetic sensors in the automotive industry.

Original languageEnglish
Title of host publication2017 IEEE International Magnetics Conference, INTERMAG 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538610862
DOIs
Publication statusPublished - 2017 Aug 10
Event2017 IEEE International Magnetics Conference, INTERMAG 2017 - Dublin, Ireland
Duration: 2017 Apr 242017 Apr 28

Publication series

Name2017 IEEE International Magnetics Conference, INTERMAG 2017

Other

Other2017 IEEE International Magnetics Conference, INTERMAG 2017
CountryIreland
CityDublin
Period17/4/2417/4/28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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