Wide dynamic range CMOS image sensors for high quality digital camera, security, automotive and medical applications

Nana Akahane, Shigetoshi Sugawa, Satoru Adachi, Koichi Mizobuchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

Wide dynamic range (DR) CMOS image sensors featuring a lateral overflow integration capacitor in a pixel, which locates next to the floating diffusion and integrates the overflow photoelectrons from the fully depleted photodiode in the same integration term, have been developed. The DR has been extended to 100 dB in a single exposure by adding the minimum number of the circuit elements to the four transistors type CMOS image sensor, with a high sensitivity, a high S/N ratio and a superior moving image quality. The hyper DR extension over 200 dB, with the equivalent light intensity ranging from 10-2 lx to 108 lx has also been achieved by the combination of the voltage readout operations of the abovementioned lateral overflow integration in multiple exposures and the current readout operation of amplifying the photodiode current. The S/N ratio dominated by all the noise components including the photon shot noise exceeds 40 dB in any switching point from low light to bright light.

Original languageEnglish
Title of host publication2006 5th IEEE Conference on Sensors
Pages396-399
Number of pages4
DOIs
Publication statusPublished - 2006
Event2006 5th IEEE Conference on Sensors - Daegu, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

NameProceedings of IEEE Sensors

Other

Other2006 5th IEEE Conference on Sensors
Country/TerritoryKorea, Republic of
CityDaegu
Period06/10/2206/10/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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