Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

K. Ohmori; P. Ahmet; K. Shiraishi; K. Yamabe; H. Watanabe; Y. Akasaka; N. Umezawa; K. Nakajima; M. Yoshitake; T. Nakayama; K. S. Chang; K. Kakushima; Y. Nara; M. L. Green; H. Iwai; K. Yamada; T. Chikyow

doi:10.1149/1.2355726

Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -

K. Ohmori, P. Ahmet, K. Shiraishi, K. Yamabe, H. Watanabe, Y. Akasaka, N. Umezawa, K. Nakajima, M. Yoshitake, T. Nakayama, K. S. Chang, K. Kakushima, Y. Nara, M. L. Green, H. Iwai, K. Yamada, T. Chikyow

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (V_fb) by using a combination of metal alloy (Pt-W)/La₂O₃ gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V _fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La₂O₃ interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La₂O₃ is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	351-362
Number of pages	12
Journal	ECS Transactions
Volume	3
Issue number	3
DOIs	https://doi.org/10.1149/1.2355726
Publication status	Published - 2006
Event	Physics and Technology of High-k Gate Dielectrics 4 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

ASJC Scopus subject areas

Engineering(all)

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Ohmori, K., Ahmet, P., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., Umezawa, N., Nakajima, K., Yoshitake, M., Nakayama, T., Chang, K. S., Kakushima, K., Nara, Y., Green, M. L., Iwai, H., Yamada, K., & Chikyow, T. (2006). Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -. ECS Transactions, 3(3), 351-362. https://doi.org/10.1149/1.2355726

Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -. / Ohmori, K.; Ahmet, P.; Shiraishi, K.; Yamabe, K.; Watanabe, H.; Akasaka, Y.; Umezawa, N.; Nakajima, K.; Yoshitake, M.; Nakayama, T.; Chang, K. S.; Kakushima, K.; Nara, Y.; Green, M. L.; Iwai, H.; Yamada, K.; Chikyow, T.

In: ECS Transactions, Vol. 3, No. 3, 2006, p. 351-362.

Research output: Contribution to journal › Conference article › peer-review

Ohmori, K, Ahmet, P, Shiraishi, K, Yamabe, K, Watanabe, H, Akasaka, Y, Umezawa, N, Nakajima, K, Yoshitake, M, Nakayama, T, Chang, KS, Kakushima, K, Nara, Y, Green, ML, Iwai, H, Yamada, K & Chikyow, T 2006, 'Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -', ECS Transactions, vol. 3, no. 3, pp. 351-362. https://doi.org/10.1149/1.2355726

Ohmori, K. ; Ahmet, P. ; Shiraishi, K. ; Yamabe, K. ; Watanabe, H. ; Akasaka, Y. ; Umezawa, N. ; Nakajima, K. ; Yoshitake, M. ; Nakayama, T. ; Chang, K. S. ; Kakushima, K. ; Nara, Y. ; Green, M. L. ; Iwai, H. ; Yamada, K. ; Chikyow, T. / Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -. In: ECS Transactions. 2006 ; Vol. 3, No. 3. pp. 351-362.

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abstract = "We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.",

author = "K. Ohmori and P. Ahmet and K. Shiraishi and K. Yamabe and H. Watanabe and Y. Akasaka and N. Umezawa and K. Nakajima and M. Yoshitake and T. Nakayama and Chang, {K. S.} and K. Kakushima and Y. Nara and Green, {M. L.} and H. Iwai and K. Yamada and T. Chikyow",

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AU - Ohmori, K.

AU - Ahmet, P.

AU - Shiraishi, K.

AU - Yamabe, K.

AU - Watanabe, H.

AU - Akasaka, Y.

AU - Umezawa, N.

AU - Nakajima, K.

AU - Yoshitake, M.

AU - Nakayama, T.

AU - Chang, K. S.

AU - Kakushima, K.

AU - Nara, Y.

AU - Green, M. L.

AU - Iwai, H.

AU - Yamada, K.

AU - Chikyow, T.

PY - 2006

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AB - We have achieved a remarkably wide range (∼1.2 V) of differences in flatband voltage (Vfb) by using a combination of metal alloy (Pt-W)/La2O3 gate stacks. The controllable range is about 3 times greater than that of Hf-based gate stacks. The wide range of V fb can be maintained even after annealing in forming gas and oxidizing gas ambients. We consider that this is attributed to charge transfer at the Pt-La2O3 interfaces inducing increase in the effective work functions, especially at high Pt composition ratios. We believe that La2O3 is one of the most promising high-k dielectric materials for future CMOS devices in 32nm-node and beyond. copyright The Electrochemical Society.

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