Wide band gap semiconductor alloy: X (LiGa O2)12 - (1-x) ZnO

Takahisa Omata, Keizo Tanaka, Atsushi Tazuke, Katsuhiro Nose, Shinya Otsuka-Yao-Matsuo

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

Oxide semiconductor alloys of x (LiGa O2)12 - (1-x) ZnO were synthesized by a standard solid state reaction. The wurtzite-type single phases were obtained in the wide composition range of x≤0.38 because the Β-LiGa O2 possesses a wurtzite-derived structure and approximately the same lattice constants with ZnO. The resulting alloys showed characteristics of wide band gap oxide n -type semiconductor; the optical transparency reached over to the ultraviolet (UV) light. The electrical conductivity and energy band gap for 0.38 (LiGa O2)12 -0.62ZnO were 8.2 -1 cm-1 and 3.7 eV, respectively, at room temperature. The alloy is a good candidate for the barrier material of the ZnO-based heterostructures and UV-transparent electrodes.

Original languageEnglish
Article number083706
JournalJournal of Applied Physics
Volume103
Issue number8
DOIs
Publication statusPublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Wide band gap semiconductor alloy: X (LiGa O2)12 - (1-x) ZnO'. Together they form a unique fingerprint.

Cite this