What is the most important growth parameter on crystal quality of the silicon layer by LPE method?

Toru Ujihara, Kazuo Obara, Noritaka Usami, Kozo Fujiwara, Gen Sazaki, Toetsu Shishido, Kazuo Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We investigated the effect of growth parameters, growth temperature, growth rate and solvent, on crystal quality of silicon thin layers grown by LPE method. Electrical and structural properties were examined by means of minority-carrier lifetime measurement and micro-Raman scattering spectroscopy. It was made clear that crystal quality strongly depends on the growth temperature mainly due to equilibrium impurity solubility in the silicon layers. In addition, it is important to choose an appropriate solvent whose solubility in crystalline silicon is low and effective capture cross section is small. In actual, we successfully grew the silicon layer of which the lifetime was higher than that of monocrystalline silicon crystal as a substrate.

Original languageEnglish
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages1241-1244
Number of pages4
Publication statusPublished - 2003 Dec 1
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: 2003 May 112003 May 18

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeB

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period03/5/1103/5/18

ASJC Scopus subject areas

  • Engineering(all)

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