We investigated the effect of growth parameters, growth temperature, growth rate and solvent, on crystal quality of silicon thin layers grown by LPE method. Electrical and structural properties were examined by means of minority-carrier lifetime measurement and micro-Raman scattering spectroscopy. It was made clear that crystal quality strongly depends on the growth temperature mainly due to equilibrium impurity solubility in the silicon layers. In addition, it is important to choose an appropriate solvent whose solubility in crystalline silicon is low and effective capture cross section is small. In actual, we successfully grew the silicon layer of which the lifetime was higher than that of monocrystalline silicon crystal as a substrate.