Wet etching of amorphous TiO2 thin films using H 3PO4-H2O2 aqueous solution

Sohei Okazaki, Takuya Ohhashi, Shoichiro Nakao, Yasushi Hirose, Taro Hitosugi, Tetsuya Hasegawa

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    6 Citations (Scopus)

    Abstract

    We report on the wet etching of amorphous undoped and Nb-doped TiO2 thin films using H3PO4-H2O2 etching solution. The etching rate (R) showed a maximum at a H3PO4 concentration of approximately 50 wt% at 80 °C, suggesting that H2PO4 and/or H3O+ is responsible for the etching reaction. The addition of H2O2 to H3PO4 solution significantly enhanced R, and an optimized solution exhibited an R of 13 nm/min at 80 °C, which is one order of magnitude higher than that using H2SO4. These results demonstrate that H3PO4-H2O2 aqueous solution is an effective etchant for TiO2-based amorphous thin films.

    Original languageEnglish
    Article number098002
    JournalJapanese journal of applied physics
    Volume52
    Issue number9
    DOIs
    Publication statusPublished - 2013 Sep 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • Cite this

    Okazaki, S., Ohhashi, T., Nakao, S., Hirose, Y., Hitosugi, T., & Hasegawa, T. (2013). Wet etching of amorphous TiO2 thin films using H 3PO4-H2O2 aqueous solution. Japanese journal of applied physics, 52(9), [098002]. https://doi.org/10.7567/JJAP.52.098002