Well-width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriers

K. Ohtani, Yuzo Ohno, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Well-width dependence of bound to quasi-bound intersubband transitions in GaAs quantum wells (QW) with multi-quantum barriers (MQB) is investigated. Narrowing the well width, the absorption peak shifts to higher energy while integrated absorption intensity decreases as the quasi-bound state energy increases. The transition energies are in good agreement with the calculation, whereas the observed decrease of integrated absorption is found to be larger than the decrease in oscillotor strength due to the spread to quasi-bound wave function. Using a simple rate equation, the decrease of the integrated absorption is discussed.

Original languageEnglish
Pages (from-to)200-203
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume2
Issue number1-4
DOIs
Publication statusPublished - 1998 Jul 15

Keywords

  • Intersubband transition
  • Multi-quantum barrier
  • Quasi-bound state

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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