Well-posedness for the drift-diffusion system in Lp arising from the semiconductor device simulation

Masaki Kurokiba, Takayoshi Ogawa

Research output: Contribution to journalArticlepeer-review

56 Citations (Scopus)

Abstract

We discuss strong solutions of a nonlinear parabolic system that arise from the simulation for the semiconductor device design. This equation considered here is governing the electron and positive hole dynamics on the MOS FET for the Large Scaled Integral-Circuit (V-LSI). We show that the existence and uniqueness and stability of the strong solution in Lp spaces and will discuss on the global existence.

Original languageEnglish
Pages (from-to)1052-1067
Number of pages16
JournalJournal of Mathematical Analysis and Applications
Volume342
Issue number2
DOIs
Publication statusPublished - 2008 Jun 15

Keywords

  • A unique time local solution
  • Drift-diffusion model
  • Elliptic-parabolic equations
  • Global solution
  • Hardy-Littlewood-Sobolev inequality
  • L spaces
  • Local well-posedness
  • Positive solution
  • Semiconductor device
  • The initial boundary value problem

ASJC Scopus subject areas

  • Analysis
  • Applied Mathematics

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