Well number design for 1.5-μm band multiple-quantum-well distributed feedback laser diodes

M. Kitamura, H. Yamada, S. Takano, T. Sasaki, N. Henmi, I. Mito, H. Hasumi

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

An experimental investigation of the well number design in 1.5-μm multiple-quantum-well distributed-feedback laser diodes (MQW DFB LDs) for direct-detection and coherent-detection optical communication systems is reported. The lasers were grown on InP grating substrates by metallorganic vapor-phase epitaxy (MOVPE); 60-70-angstrom-thick InGaAs wells, separated by approx. 150-angstrom-thick InGaAsP (λ g = 1.15-μm) barriers, were used. The well number of tested devices ranged from three to ten. All the LDs tested were approx. 300 μm long. Threshold currents were typically 10-20 mA and were independent of the well number. A higher resonance frequency was observed with an increasing well number. LDs with ten wells showed 8-GHz resonance frequency, which is approx. 30-40% higher than that for regular DFB LDs. A distinct reduction in the spectral linewidth power product was observed with decreasing well number; 900-kHz minimum linewidth was attained in a 700-μm-long MQW DFB LD with three wells. The 20-dB down spectral chirp width was measured at 2.4-Gb/s return-to-zero modulation with a bias current at threshold and 60-mA p-p modulation current. They were typically 4 angstrom and were one-third of that in regular DFB LDs in all cases and did not show a clear dependence on the well number. Results for 1.5-μm MQW DFB LDs indicate that well numbers are optimized differently for direct-detection and coherent-detection systems.

Original languageEnglish
Number of pages1
Publication statusPublished - 1989 Dec 1
Externally publishedYes
EventOptical Fiber Communication Conference: Summaries of Papers - Houston, TX, USA
Duration: 1989 Feb 61989 Feb 9

Other

OtherOptical Fiber Communication Conference: Summaries of Papers
CityHouston, TX, USA
Period89/2/689/2/9

ASJC Scopus subject areas

  • Engineering(all)

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