Well-behaved metal-oxide-semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor-liquid hybrid deposition process

Y. Xuan, Daisuke Hojo, T. Yasuda

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A well-behaved metal-oxide-semiconductor (MOS) capacitor characteristics of hafnium silicate (Hf) films prepared by vapor liquid hybrid deposition (VALID) were described. Hf silicate films were deposited at room temperature using TEOS as a silicon precursor. They exhibit well-behaved MOS capacitor characteristics after appropriate annealing treatments. Experiments were carried out using p type Si(001) wafers with resistivity of 1-5 ω cm. The leakage current density was four orders of magnitude lower than silica reference data in the equivalent-oxide-thickness range of >2.5 nm.

Original languageEnglish
Pages (from-to)5097-5099
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number25
DOIs
Publication statusPublished - 2004 Jun 21

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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