Weak metastability of Al xGa1- x N ( x = 13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps

Akira Hirano, Yosuke Nagasawa, Masamichi Ippommatsu, Hideki Sako, Ai Hashimoto, Ryuichi Sugie, Yoshio Honda, Hiroshi Amano, Kazunobu Kojima, Shigefusa F. Chichibu

Research output: Contribution to journalArticlepeer-review

Abstract

Energy-dispersive X-ray signals calibrated by Rutherford backscattering indicated the generation of Al13/24Ga11/24N in Ga-rich stripes in a nonflat Al0.58Ga0.42N layer. Also, the CL peak wavelengths of ∼259 and 272 nm also showed the generation of Al15/24Ga9/24N and Al13/24Ga11/24N in Al-rich zones and Ga-rich stripes, respectively. The wavelength of a strong CL peak at ∼246 nm, which was observed from the Al0.7Ga0.3N layer in our previous study, is also considered to correspond to the near-band-emission wavelengths of Al17/24Ga7/24N. In particular, the stronger reproducibility of metastable Al15/24Ga9/24N generation was confirmed, in agreement with the computed predictions by other research groups.

Original languageEnglish
Article number075505
JournalApplied Physics Express
Volume15
Issue number7
DOIs
Publication statusPublished - 2022 Jul

Keywords

  • AlGaN
  • cathodoluminescence
  • EDX
  • metastability
  • ordering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'Weak metastability of Al xGa1- x N ( x = 13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps'. Together they form a unique fingerprint.

Cite this