Weak localization properties of graphene with intrinsic and Rashba spin-orbit couplings

Ken Ichiro Imura, Yoshio Kuramoto, Kentaro Nomura

Research output: Contribution to journalConference articlepeer-review

Abstract

We propose the notion of counting the number of activated spins to identify the weak localization properties of graphene under effects of inter-valley scattering, intrinsic and Rashba spin-orbit interactions (SOI). It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.

Original languageEnglish
Pages (from-to)1249-1254
Number of pages6
JournalPhysics Procedia
Volume3
Issue number2
DOIs
Publication statusPublished - 2010 Jan 31
Event14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan
Duration: 2009 Jul 132009 Jul 17

Keywords

  • Graphene
  • Spin-orbit coupling
  • Topological insulator
  • Weak localization

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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