Weak localization properties of graphene with intrinsic and Rashba spin-orbit couplings

Ken Ichiro Imura; Yoshio Kuramoto; Kentaro Nomura

doi:10.1016/j.phpro.2010.01.171

Weak localization properties of graphene with intrinsic and Rashba spin-orbit couplings

Ken Ichiro Imura, Yoshio Kuramoto, Kentaro Nomura

Research output: Contribution to journal › Conference article › peer-review

Abstract

We propose the notion of counting the number of activated spins to identify the weak localization properties of graphene under effects of inter-valley scattering, intrinsic and Rashba spin-orbit interactions (SOI). It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.

Original language	English
Pages (from-to)	1249-1254
Number of pages	6
Journal	Physics Procedia
Volume	3
Issue number	2
DOIs	https://doi.org/10.1016/j.phpro.2010.01.171
Publication status	Published - 2010 Jan 31
Event	14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan Duration: 2009 Jul 13 → 2009 Jul 17

Keywords

Graphene
Spin-orbit coupling
Topological insulator
Weak localization

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Weak localization properties of graphene with intrinsic and Rashba spin-orbit couplings",

abstract = "We propose the notion of counting the number of activated spins to identify the weak localization properties of graphene under effects of inter-valley scattering, intrinsic and Rashba spin-orbit interactions (SOI). It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.",

keywords = "Graphene, Spin-orbit coupling, Topological insulator, Weak localization",

author = "Imura, {Ken Ichiro} and Yoshio Kuramoto and Kentaro Nomura",

note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.; 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 ; Conference date: 13-07-2009 Through 17-07-2009",

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AU - Kuramoto, Yoshio

AU - Nomura, Kentaro

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N2 - We propose the notion of counting the number of activated spins to identify the weak localization properties of graphene under effects of inter-valley scattering, intrinsic and Rashba spin-orbit interactions (SOI). It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.

AB - We propose the notion of counting the number of activated spins to identify the weak localization properties of graphene under effects of inter-valley scattering, intrinsic and Rashba spin-orbit interactions (SOI). It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.

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KW - Spin-orbit coupling

KW - Topological insulator

KW - Weak localization

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