Abstract
We propose the notion of counting the number of activated spins to identify the weak localization properties of graphene under effects of inter-valley scattering, intrinsic and Rashba spin-orbit interactions (SOI). It is predicted that perpendicular electric field due to gate voltage of the substrate drives the system to anti-localization by enhancing the Rashba SOI.
Original language | English |
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Pages (from-to) | 1249-1254 |
Number of pages | 6 |
Journal | Physics Procedia |
Volume | 3 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2010 Jan 31 |
Event | 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan Duration: 2009 Jul 13 → 2009 Jul 17 |
Keywords
- Graphene
- Spin-orbit coupling
- Topological insulator
- Weak localization
ASJC Scopus subject areas
- Physics and Astronomy(all)