Graphene transistors were fabricated by a wafer-scale "top-down" process using a graphene sheet formed by the chemical vapor deposition (CVD) method. The devices have a dual-gated structure with an ion-irradiated channel, in which transistor polarity can be electrostatically controlled. We demonstrated, at room temperature, an on/off operation of current and electrostatic control of transistor polarity. By combining two dual-gated transistors, a six-terminal device was fabricated with three top gates and two ion-irradiated channels. In this device, we demonstrated an inverter operation.
ASJC Scopus subject areas
- Physics and Astronomy(all)