Wafer-scale and deterministic patterned growth of monolayer mos2 via vapor-liquid-solid method

Shisheng Li, Yung Chang Lin, Xu Ying Liu, Zehua Hu, Jing Wu, Hideaki Nakajima, Song Liu, Toshiya Okazaki, Wei Chen, Takeo Minari, Yoshiki Sakuma, Kazuhito Tsukagoshi, Kazu Suenaga, Takaaki Taniguchi, Minoru Osada

Research output: Contribution to journalArticlepeer-review

Abstract

Vapor transportation is the core process in growing transition-metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). One inevitable problem is the spatial inhomogeneity of the vapors. The non-stoichiometric supply of transition-metal precursors and chalcogen leads to poor control in products’ location, morphology, crystallinity, uniformity and batch to batch reproducibility. While vapor-liquid-solid (VLS) growth involves molten precursors (e.g., non-volatile Na2MoO4) at the growth temperatures higher than their melting points. The liquid Na2MoO4 can precipitate solid MoS2 monolayers when saturated with sulfur vapor. Taking advantage of the VLS growth, we achieved three kinds of important achievements: (i) 4-inch-wafer-scale uniform growth of MoS2 flakes on SiO2/Si substrates, (ii) 2-inch-wafer-scale growth of continuous MoS2 film with a grain size exceeding 100 μm on sapphire substrates, and (iii) pattern (site-controlled) growth of MoS2 flakes and film. We clarified that the VLS growth thus pave the new way for the high-efficient, scalable synthesis of two-dimensional TMDC monolayers.

Original languageEnglish
JournalUnknown Journal
Publication statusPublished - 2019 Jun 12

Keywords

  • Chemical vapor deposition
  • Patterned growth
  • Two-dimensional materials
  • Vapor-liquid-solid
  • Wafer-scale growth

ASJC Scopus subject areas

  • General

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