Wafer-level vacuum packaging by thermocompression bonding using silver after fly-cut planarization

C. Liu, H. Hirano, J. Froemel, S. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A novel wafer-level vacuum thermocompression bonding using electroplated Ag bonding frames which were planarized by diamond fly cutting was described. At relatively low temperature and press pressure, high shear strength and vacuum sealing were achieved. The diffusion of Ag into a Si substrate was suppressed by the implementation of a TiN barrier layer. Leak rate was measured by zero balance method was at approximately 3.6×10-14 Pa·m3/s. Therefore, the proposed process was useful for both wafer-level heterogeneous integration, such as the integration of MEMS and LSI circuits, and hermetic packaging for various microsystems.

Original languageEnglish
Title of host publicationSemiconductor Wafer Bonding
Subtitle of host publicationScience, Technology and Applications 14
EditorsR. Knechtel, F. Fournel, K. D. Hobart, T. Suga, H. Baumgart, C. S. Tan, M. S. Goorsky
PublisherElectrochemical Society Inc.
Pages291-297
Number of pages7
Edition9
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number9
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Semiconductor Wafer Bonding: Science, Technology and Applications 14 - PRiME 2016/230th ECS Meeting
Country/TerritoryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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